Datasheet > AM8958C

AM8958C

更新时间： 2024-11-06 12:52:19

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描述
P & N-Channel 32-V (D-S) MOSFET

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AM8958C 数据手册

Analog Power

AM8958C

P & N-Channel 32-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize

High Cell Density process. Low r_DS(on)assures

minimal power loss and conserves energy, making

this device ideal for use in power management

circuitry. Typical applications are PWMDC-DC

converters, power management in portable and

battery-powered products such as computers,

printers, battery charger, telecommunication power

system, and telephones power system.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)m(Ω)

I_D(A)

6.0

40 @ V_GS= 4.5V

29 @ V_GS= 10V

80 @ V_GS= -4.5V

52 @ V_GS= -10V

7.0

-4.0

-5.2

-32

•

Low r_DS(on)Provides Higher Efficiency and

Extends Battery Life

Miniature SO-8 Surface Mount Package

Saves Board Space

•

High power and current handling capability

Low side high current DC-DC Converter

applications

ABSOLUTE MAXIMUM RATINGS (T_A= 25 C UNLESS OTHERWISE NOTED)

Parameter Symbol N-Channel P-Channel Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

-32

±20

T_A=25^oC

T_A=70^oC

-5.2

-6.8

-20

-1.3

2.1

Continuous Drain Current^a

I_D

5.6

Pulsed Drain Current^b

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

T_A=25^oC

1.3

2.1

Power Dissipation^a

P_D

T_A=70^oC

1.3

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Units

Maximum Junction-to-Case^a

^oC/W

R_θJC

t <= 5 sec

Maximum Junction-to-Ambient^a

R_θJA

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM8958_F

September, 2003 - Rev. A

PRELIMINARY

12 3 4 5 6 7 8

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