Datasheet > AM8882J8VR

AM8882J8VR

更新时间： 2024-09-17 01:12:55

品牌	Logo	应用领域
创瑞 - AITSEMI		/
页数	文件大小	规格书
9页	526K
描述
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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AM8882J8VR 数据手册

AM8882

AiT Semiconductor Inc.

www.ait-ic.com

MOSFET

DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION

FEATURES

The AM8882 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V. The

device is suitable for use as a load switch or in PWM

applications. It is ESD protested.



V_DS= 20V, I_D= 8A

Typ.R_DS(ON)= 9.5mΩ @ V_GS= 4.5V

Typ.R_DS(ON)= 13mΩ @ V_GS= 2.5V

ESD Rating: 2000V HBM



High Power and current handing capability

Surface Mount Package

AM8882 is available in a DFN8 (2 x 3) package.

Available in a DFN8 (2 x 3) package.

ORDERING INFORMATION

APPLICATION



Uni-directional load switch

Bi-directional load switch

Package Type

DFN8

Part Number

AM8882J8R

AM8882J8VR

PIN DESCRIPTION

V: Halogen free Package

R: Tape & Reel

Note

AiT provides all RoHS products

Suffix “ V “ means Halogen free Package

Schematic diagram

REV1.1

- JAN 2015 RELEASED, MAY 2016 UPDATED -

- 1 -

12 3 4 5 6 7...9

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