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AM4407M8R PDF预览

AM4407M8R

更新时间: 2024-10-31 01:15:31
品牌 Logo 应用领域
创瑞 - AITSEMI /
页数 文件大小 规格书
8页 481K
描述
P-CHANNEL ENHANCEMENT MODE MOSFET

AM4407M8R 数据手册

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AM4407  
AiT Semiconductor Inc.  
www.ait-ic.com  
MOSFET  
-30V P-CHANNEL ENHANCEMENT MODE  
DESCRIPTION  
FEATURES  
The AM4407 is the P-Channel logic enhancement  
mode power field effect transistor is produced using  
high cell density. Advanced trench technology to  
30V/-12.0A, RDS(ON) = 12mΩ(typ)@VGS =-10V  
-30V/-7.5A, RDS(ON) = 19mΩ(typ)@VGS =-4.5V  
Super high density cell design for extremely low  
RDS(ON)  
provide excellent RDS(ON)  
.
Exceptional on-resistance and maximum DC  
current capability  
This high density process is especially tailored to  
minimize on-state resistance.  
Available in SOP8 Package  
These devices are particularly suited for low voltage  
application, and low in-line power loss are needed in  
a very small outline surface mount package.  
APPLICATION  
High Frequency Point-of-Load Synchronous  
New working DC-DC Power System  
Load Switch  
The AM4407 is available in SOP8 Package  
ORDERING INFORMATION  
P CHANNEL MOSFET  
Package Type  
SOP8  
Part Number  
AM4407M8R  
AM4407M8VR  
M8  
R: Tape & Reel  
Note  
V: Green Package  
AiT provides all Pb free products  
Suffix “ V “ means Green Package  
REV1.0  
- SEP 2010 RELEASED –  
- 1 -  

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