Datasheet > AM4409P

AM4409P

更新时间： 2024-09-13 12:52:15

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描述
P-Channel 20-V (D-S) MOSFET

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AM4409P 数据手册

Analog Power

AM4409P

P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

These miniature surface mount MOSFETs utilize

High Cell Density process. Low r_DS(on)assures

minimal power loss and conserves energy, making

this device ideal for use in power management

circuitry. Typical applications are PWMDC-DC

converters, power management in portable and

battery-powered products such as computers,

printers, battery charger, telecommunication power

system, and telephones power system.

V_DS(V)

r_DS(on)m(Ω)

20 @ V_GS= -4.5V

I_D(A)

10.2

8.5

29 @ V_GS= -2.5V

54 @ V_GS= -1.8V

-20

6.2

•

Low r_DS(on)Provides Higher Efficiency and

Extends Battery Life

Miniature SO-8 Surface Mount Package

Saves Board Space

High power and current handling capability

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-20

±12

T_A=25^oC

T_A=70^oC

10.2

8.2

±30

-2.3

3.1

Continuous Drain Current^a

Pulsed Drain Current^b

I_D

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

^oC

T_A=25^oC

T_A=70^oC

Power Dissipation^a

P_D

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_θJA

Maximum Units

^oC/W

t <= 10 sec

Steady State

Maximum Junction-to-Ambient^a

^oC/W

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM4409_F

November, 2003 - Rev. A

PRELIMINARY

12 3 4 5

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