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AM4430N PDF预览

AM4430N

更新时间: 2024-10-30 12:52:15
品牌 Logo 应用领域
ANALOGPOWER /
页数 文件大小 规格书
3页 165K
描述
N-Channel 30-V (D-S) MOSFET

AM4430N 数据手册

 浏览型号AM4430N的Datasheet PDF文件第2页浏览型号AM4430N的Datasheet PDF文件第3页 
Analog Power  
AM4430N  
N-Channel 30-V (D-S) MOSFET  
These miniature surface mount MOSFETs utilize a  
high cell density trench process to provide low  
rDS(on) and to ensure minimal power loss and heat  
dissipation. Typical applications are DC-DC  
converters and power management in portable and  
battery-powered products such as computers,  
printers, PCMCIA cards, cellular and cordless  
telephones.  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) m()  
13.5 @ VGS = 4.5V  
20 @ VGS = 2.5V  
ID (A)  
13  
30  
11  
Low rDS(on) provides higher efficiency and  
extends battery life  
8
1
2
7
6
5
Low thermal impedance copper leadframe  
SOIC-8 saves board space  
3
4
Fast switching speed  
High performance trench technology  
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
VDS  
Limit  
30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
±12  
TA=25oC  
TA=70oC  
±13  
±11  
±50  
2.3  
Continuous Drain Currenta  
ID  
A
Pulsed Drain Currentb  
Continuous Source Current (Diode Conduction)a  
Power Dissipationa  
IDM  
IS  
A
TA=25oC  
TA=70oC  
3.1  
PD  
W
2.2  
oC  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Maximum Units  
Maximum Junction-to-Casea  
oC/W  
25  
t <= 5 sec  
t <= 5 sec  
RθJC  
RθJA  
Maximum Junction-to-Ambienta  
50  
oC/W  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
1
Publication Order Number:  
DS-AM4430_A  
PRELIMINARY  

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