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AM4409M8R PDF预览

AM4409M8R

更新时间: 2024-10-31 01:15:31
品牌 Logo 应用领域
创瑞 - AITSEMI /
页数 文件大小 规格书
8页 868K
描述
P-CHANNEL ENHANCEMENT MODE MOSFET

AM4409M8R 数据手册

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AM4409  
AiT Semiconductor Inc.  
www.ait-ic.com  
MOSFET  
P-CHANNEL ENHANCEMENT MODE  
DESCRIPTION  
FEATURES  
The AM4409 is the P-Channel logic enhancement  
mode power field effect transistor is produced using  
high cell density advanced trench technology..  
-30V/-15A, RDS(ON)=5.5mΩ(typ.)@VGS=-10V  
-30V/-10A, RDS(ON)=6.5mΩ(typ.)@VGS=-4.5V  
Super high design for extremely low RDS(ON)  
Exceptional on-resistance and Maximum DC  
current capability  
This high density process is especially tailored to  
minimize on-state resistance. These devices are  
particularly suited for low voltage application,  
notebook computer power management and other  
battery powered circuits where high-side switching  
ESD Protected: 3kV  
Available in SOP8 package.  
AM4409 is available in SOP8 package.  
ORDERING INFORMATION  
APPLICATION  
High Frequency Point-of-Load Synchronous  
Networking DC-DC Power System  
Load Switch  
Package Type  
Part Number  
AM4409M8R  
AM4409M8VR  
SOP8  
M8  
SPQ: 3,000pcs/Reel  
PIN DESCRIPTION  
V: Halogen free Package  
R: Tape & Reel  
Note  
AiT provides all RoHS products  
REV1.0  
- MAR 2017 RELEASED -  
- 1 -  

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