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AM4436N PDF预览

AM4436N

更新时间: 2024-11-01 07:16:55
品牌 Logo 应用领域
ANALOGPOWER /
页数 文件大小 规格书
5页 120K
描述
N-Channel 30-V (D-S) MOSFET

AM4436N 数据手册

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Analog Power  
AM4436N  
N-Channel 30-V (D-S) MOSFET  
These miniature surface mount MOSFETs utilize a  
high cell density trench process to provide low  
rDS(on) and to ensure minimal power loss and heat  
dissipation. Typical applications are DC-DC  
converters and power management in portable and  
battery-powered products such as computers,  
printers, PCMCIA cards, cellular and cordless  
telephones.  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) m()  
ID (A)  
4.6 @ VGS = 10V  
6.8 @ VGS = 4.5V  
22  
18  
30  
Low rDS(on) provides higher efficiency and  
extends battery life  
8
1
2
7
6
5
Low thermal impedance copper leadframe  
SOIC-8 saves board space  
3
4
Fast switching speed  
High performance trench technology  
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)  
Parameter Symbol Maximum Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
30  
20  
V
A
TA=25oC  
TA=70oC  
22  
18  
Continuous Drain Currenta  
ID  
Pulsed Drain Currentb  
60  
IDM  
IS  
Continuous Source Current (Diode Conduction)a  
Power Dissipationa  
2.9  
3.1  
2.2  
A
TA=25oC  
TA=70oC  
PD  
W
oC  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol Maximum Units  
oC/W  
t <= 10 sec  
Steady State  
40  
Maximum Junction-to-Ambienta  
RθJA  
80  
oC/W  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
1
Publication Order Number:  
DS-AM4436_B  
PRELIMINARY  

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