Datasheet > AM29F040B-90FI

AM29F040B-90FI

更新时间： 2024-11-26 05:26:31

品牌	Logo	应用领域
超微 - AMD		/
页数	文件大小	规格书
35页	762K
描述
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AM29F040B-90FI 数据手册

Am29F040B

4 Megabit (512 K x 8-Bit)

CMOS 5.0 Volt-only, Uniform Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ 5.0 V ± 10% for read and write operations

■ Embedded Algorithms

— Minimizes system level power requirements

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

■ Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29F040 device

— Embedded Program algorithm automatically

writes and verifies bytes at specified addresses

■ High performance

— Access times as fast as 55 ns

■ Minimum 1,000,000 program/erase cycles per

sector guaranteed

■ Low power consumption

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package options

— 20 mA typical active read current

— 30 mA typical program/erase current

— 1 µA typical standby current (standard access

time to active mode)

— 32-pin PLCC, TSOP, or PDIP

■ Flexible sector architecture

— 8 uniform sectors of 64 Kbytes each

— Any combination of sectors can be erased

— Supports full chip erase

■ Compatible with JEDEC standards

— Pinout and software compatible with

single-power-supply Flash standard

— Superior inadvertent write protection

— Sector protection:

■ Data# Polling and toggle bits

A hardware method of locking sectors to prevent

any program or erase operations within that sector

— Provides a software method of detecting

program or erase cycle completion

■ Erase Suspend/Erase Resume

— Suspends a sector erase operation to read data

from, or program data to, a non-erasing sector,

then resumes the erase operation

Publication# 21445 Rev: E Amendment/0

Issue Date: November 29, 2000

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

12 3 4 5 6 7...35

中文翻译

下载PDF

与AM29F040B-90FI相关器件

型号	品牌	获取价格	描述	数据表
AM29F040B-90FIB	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-90FK	SPANSION	获取价格	Flash, 512KX8, 90ns, PDSO32, REVERSE, MO-142BD, TSOP-32
AM29F040B-90FKB	SPANSION	获取价格	Flash, 512KX8, 90ns, PDSO32, REVERSE, TSOP-32
AM29F040B-90JC	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-90JCB	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-90JCT	SPANSION	获取价格	Flash, 512KX8, 90ns, PQCC32, PLASTIC, LCC-32
AM29F040B-90JD	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-90JDB	SPANSION	获取价格	Flash, 512KX8, 90ns, PQCC32, PLASTIC, LCC-32
AM29F040B-90JE	SPANSION	获取价格	Flash, 512KX8, 90ns, PQCC32, PLASTIC, MO-052AE, LCC-32
AM29F040B-90JE	AMD	获取价格	4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

与AM29F040B-90FI相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

AM29F040B-90FI

AM29F040B-90FI 数据手册

与AM29F040B-90FI相关器件

与AM29F040B-90FI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AM29F040B-90FI

AM29F040B-90FI 数据手册

与AM29F040B-90FI相关器件

与AM29F040B-90FI相关文章

您还可以找

您在本页遇到什么问题？