Datasheet > AM28F010-200EEB

AM28F010-200EEB

更新时间： 2024-09-13 20:21:11

品牌	Logo	应用领域
罗彻斯特 - ROCHESTER		光电二极管内存集成电路
页数	文件大小	规格书
35页	483K
描述
Flash, 128KX8, 200ns, PDSO32, TSOP-32

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AM28F010-200EEB 技术参数

生命周期：	Contact Manufacturer	包装说明：	TSSOP,
Reach Compliance Code：	unknown	ECCN代码：	3A001.A.2.C
HTS代码：	8542.32.00.51	风险等级：	5.68
Is Samacsys：	N	最长访问时间：	200 ns
其他特性：	10K WRITE/ERASE CYCLES MIN	JESD-30 代码：	R-PDSO-G32
JESD-609代码：	e0	长度：	18.4 mm
内存密度：	1048576 bit	内存集成电路类型：	FLASH
内存宽度：	8	功能数量：	1
端子数量：	32	字数：	131072 words
字数代码：	128000	工作模式：	ASYNCHRONOUS
最高工作温度：	125 °C	最低工作温度：	-55 °C
组织：	128KX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSSOP	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	并行/串行：	PARALLEL
编程电压：	12 V	座面最大高度：	1.2 mm
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	MILITARY
端子面层：	TIN LEAD	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
类型：	NOR TYPE	宽度：	8 mm
Base Number Matches：	1

AM28F010-200EEB 数据手册

FINAL

Am28F010

1 Megabit (128 K x 8-Bit)

CMOS 12.0 Volt, Bulk Erase Flash Memory

DISTINCTIVE CHARACTERISTICS

■ High performance

■ Flasherase™ Electrical Bulk Chip-Erase

— 70 ns maximum access time

— One second typical chip-erase

■ CMOS Low power consumption

— 30 mA maximum active current

— 100 µA maximum standby current

— No data retention power consumption

■ Flashrite™ Programming

— 10 µs typical byte-program

— Two seconds typical chip program

■ Command register architecture for

microprocessor/microcontroller compatible

write interface

■ Compatible with JEDEC-standard byte-wide

32-Pin EPROM pinouts

— 32-pin PDIP

■ On-chip address and data latches

— 32-pin PLCC

■ Advanced CMOS flash memory technology

— 32-pin TSOP

— Low cost single transistor memory cell

■ 10,000 write/erase cycles minimum

■ Automatic write/erase pulse stop timer

■ Write and erase voltage 12.0 V ±5%

■ Latch-up protected to 100 mA

from –1 V to V

+1 V

GENERAL DESCRIPTION

The Am28F010 is a 1 Megabit Flash memory orga-

nized as 128 Kbytes of 8 bits each. AMD’s Flash

memories offer the most cost-effective and reliable

read/write non-volatile random access memory. The

Am28F010 is packaged in 32-pin PDIP, PLCC, and

TSOP versions. It is designed to be reprogrammed

and erased in-system or in standard EPROM pro-

grammers. The Am28F010 is erased when shipped

from the factory.

AMD’s Flash technology reliably stores memory con-

tents even after 10,000 erase and program cycles. The

AMD cell is designed to optimize the erase and pro-

gramming mechanisms. In addition, the combination of

advanced tunnel oxide processing and low internal

electric fields for erase and programming operations

produces reliable cycling. The Am28F010 uses a

12.0V±5% V_PPhigh voltage input to perform the

Flasherase and Flashrite algorithms.

The standard Am28F010 offers access times as fast as

70 ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the Am28F010 has separate chip enable (CE#) and

output enable (OE#) controls.

The highest degree of latch-up protection is achieved

with AMD’s proprietary non-epi process. Latch-up pro-

tection is provided for stresses up to 100 milliamps on

address and data pins from –1 V to V_CC+1 V.

The Am28F010 is byte programmable using 10 ms pro-

gramming pulses in accordance with AMD’s Flashrite

programming algorithm. The typical room temperature

programming time of the Am28F010 is two seconds.

The entire chip is bulk erased using 10 ms erase pulses

according to AMD’s Flasherase alrogithm. Typical era-

sure at room temperature is accomplished in less than

one second. The windowed package and the 15–20

AMD’s Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

Am28F010 uses a command register to manage this

functionality, while maintaining a JEDEC Flash Stan-

dard 32-pin pinout. The command register allows for

100% TTL level control inputs and fixed power supply

levels during erase and programming, while maintain-

ing maximum EPROM compatibility.

Publication# 11559 Rev: I Amendment/0

Issue Date: May 12, 1999

12 3 4 5 6 7...35

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与AM28F010-200EEB相关器件

型号	品牌	获取价格	描述	数据表
AM28F010-200EI	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-200EIB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-200FC	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-200FCB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-200FE	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-200FEB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-200FI	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-200FIB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-200JC	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-200JCB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

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