Datasheet > AM28F010-70EE

AM28F010-70EE

更新时间： 2024-11-04 23:00:27

品牌	Logo	应用领域
超微 - AMD		闪存内存集成电路光电二极管
页数	文件大小	规格书
35页	466K
描述
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

AM28F010-70EE 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TSOP	包装说明：	TSOP-32
针数：	32	Reach Compliance Code：	unknown
ECCN代码：	3A001.A.2.C	HTS代码：	8542.32.00.51
风险等级：	5.32	Is Samacsys：	N
最长访问时间：	70 ns	命令用户界面：	YES
数据轮询：	NO	耐久性：	10000 Write/Erase Cycles
JESD-30 代码：	R-PDSO-G32	JESD-609代码：	e0
长度：	18.4 mm	内存密度：	1048576 bit
内存集成电路类型：	FLASH	内存宽度：	8
功能数量：	1	端子数量：	32
字数：	131072 words	字数代码：	128000
工作模式：	ASYNCHRONOUS	最高工作温度：	125 °C
最低工作温度：	-55 °C	组织：	128KX8
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSSOP	封装等效代码：	TSSOP32,.8,20
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	5 V	编程电压：	12 V
认证状态：	Not Qualified	座面最大高度：	1.2 mm
最大待机电流：	0.0001 A	子类别：	Flash Memories
最大压摆率：	0.03 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	MILITARY	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
切换位：	NO	类型：	NOR TYPE
宽度：	8 mm	Base Number Matches：	1

AM28F010-70EE 数据手册

FINAL

Am28F010

1 Megabit (128 K x 8-Bit)

CMOS 12.0 Volt, Bulk Erase Flash Memory

DISTINCTIVE CHARACTERISTICS

■ High performance

■ Flasherase™ Electrical Bulk Chip-Erase

— 70 ns maximum access time

— One second typical chip-erase

■ CMOS Low power consumption

— 30 mA maximum active current

— 100 µA maximum standby current

— No data retention power consumption

■ Flashrite™ Programming

— 10 µs typical byte-program

— Two seconds typical chip program

■ Command register architecture for

microprocessor/microcontroller compatible

write interface

■ Compatible with JEDEC-standard byte-wide

32-Pin EPROM pinouts

— 32-pin PDIP

■ On-chip address and data latches

— 32-pin PLCC

■ Advanced CMOS flash memory technology

— 32-pin TSOP

— Low cost single transistor memory cell

■ 10,000 write/erase cycles minimum

■ Automatic write/erase pulse stop timer

■ Write and erase voltage 12.0 V ±5%

■ Latch-up protected to 100 mA

from –1 V to V

+1 V

GENERAL DESCRIPTION

The Am28F010 is a 1 Megabit Flash memory orga-

nized as 128 Kbytes of 8 bits each. AMD’s Flash mem-

ories offer the most cost-effective and reliable read/

write non-volatile random access memory. The

Am28F010 is packaged in 32-pin PDIP, PLCC, and

TSOP versions. It is designed to be reprogrammed

and erased in-system or in standard EPROM pro-

grammers. The Am28F010 is erased when shipped

from the factory.

AMD’s Flash technology reliably stores memory con-

tents even after 10,000 erase and program cycles. The

AMD cell is designed to optimize the erase and pro-

gramming mechanisms. In addition, the combination of

advanced tunnel oxide processing and low internal

electric fields for erase and programming operations

produces reliable cycling. The Am28F010 uses a

12.0V±5% V_PPhigh voltage input to perform the

Flasherase and Flashrite algorithms.

The standard Am28F010 offers access times as fast as

70 ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the Am28F010 has separate chip enable (CE#) and

output enable (OE#) controls.

The highest degree of latch-up protection is achieved

with AMD’s proprietary non-epi process. Latch-up pro-

tection is provided for stresses up to 100 milliamps on

address and data pins from –1 V to V_CC+1 V.

The Am28F010 is byte programmable using 10 ms pro-

gramming pulses in accordance with AMD’s Flashrite

programming algorithm. The typical room temperature

programming time of the Am28F010 is two seconds.

The entire chip is bulk erased using 10 ms erase pulses

according to AMD’s Flasherase alrogithm. Typical era-

sure at room temperature is accomplished in less than

one second. The windowed package and the 15–20

AMD’s Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

Am28F010 uses a command register to manage this

functionality, while maintaining a JEDEC Flash Stan-

dard 32-pin pinout. The command register allows for

100% TTL level control inputs and fixed power supply

levels during erase and programming, while maintain-

ing maximum EPROM compatibility.

Publication# 11559 Rev: H Amendment/+2

Issue Date: January 1998

12 3 4 5 6 7...35

中文翻译

下载PDF

与AM28F010-70EE相关器件

型号	品牌	获取价格	描述	数据表
AM28F010-70EEB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-70EEB	ROCHESTER	获取价格	Flash, 128KX8, 70ns, PDSO32, TSOP-32
AM28F010-70EI	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-70EIB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-70FC	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-70FCB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-70FE	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-70FEB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-70FI	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-70FIB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

与AM28F010-70EE相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

AM28F010-70EE

AM28F010-70EE 技术参数

AM28F010-70EE 数据手册

与AM28F010-70EE相关器件

与AM28F010-70EE相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AM28F010-70EE

AM28F010-70EE 技术参数

AM28F010-70EE 数据手册

与AM28F010-70EE相关器件

与AM28F010-70EE相关文章

您还可以找

您在本页遇到什么问题？