Datasheet > AM28F010-200EIB

AM28F010-200EIB

更新时间： 2024-10-30 23:00:27

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
35页	466K
描述
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

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AM28F010-200EIB 数据手册

FINAL

Am28F010

1 Megabit (128 K x 8-Bit)

CMOS 12.0 Volt, Bulk Erase Flash Memory

DISTINCTIVE CHARACTERISTICS

■ High performance

■ Flasherase™ Electrical Bulk Chip-Erase

— 70 ns maximum access time

— One second typical chip-erase

■ CMOS Low power consumption

— 30 mA maximum active current

— 100 µA maximum standby current

— No data retention power consumption

■ Flashrite™ Programming

— 10 µs typical byte-program

— Two seconds typical chip program

■ Command register architecture for

microprocessor/microcontroller compatible

write interface

■ Compatible with JEDEC-standard byte-wide

32-Pin EPROM pinouts

— 32-pin PDIP

■ On-chip address and data latches

— 32-pin PLCC

■ Advanced CMOS flash memory technology

— 32-pin TSOP

— Low cost single transistor memory cell

■ 10,000 write/erase cycles minimum

■ Automatic write/erase pulse stop timer

■ Write and erase voltage 12.0 V ±5%

■ Latch-up protected to 100 mA

from –1 V to V

+1 V

GENERAL DESCRIPTION

The Am28F010 is a 1 Megabit Flash memory orga-

nized as 128 Kbytes of 8 bits each. AMD’s Flash mem-

ories offer the most cost-effective and reliable read/

write non-volatile random access memory. The

Am28F010 is packaged in 32-pin PDIP, PLCC, and

TSOP versions. It is designed to be reprogrammed

and erased in-system or in standard EPROM pro-

grammers. The Am28F010 is erased when shipped

from the factory.

AMD’s Flash technology reliably stores memory con-

tents even after 10,000 erase and program cycles. The

AMD cell is designed to optimize the erase and pro-

gramming mechanisms. In addition, the combination of

advanced tunnel oxide processing and low internal

electric fields for erase and programming operations

produces reliable cycling. The Am28F010 uses a

12.0V±5% V_PPhigh voltage input to perform the

Flasherase and Flashrite algorithms.

The standard Am28F010 offers access times as fast as

70 ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the Am28F010 has separate chip enable (CE#) and

output enable (OE#) controls.

The highest degree of latch-up protection is achieved

with AMD’s proprietary non-epi process. Latch-up pro-

tection is provided for stresses up to 100 milliamps on

address and data pins from –1 V to V_CC+1 V.

The Am28F010 is byte programmable using 10 ms pro-

gramming pulses in accordance with AMD’s Flashrite

programming algorithm. The typical room temperature

programming time of the Am28F010 is two seconds.

The entire chip is bulk erased using 10 ms erase pulses

according to AMD’s Flasherase alrogithm. Typical era-

sure at room temperature is accomplished in less than

one second. The windowed package and the 15–20

AMD’s Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

Am28F010 uses a command register to manage this

functionality, while maintaining a JEDEC Flash Stan-

dard 32-pin pinout. The command register allows for

100% TTL level control inputs and fixed power supply

levels during erase and programming, while maintain-

ing maximum EPROM compatibility.

Publication# 11559 Rev: H Amendment/+2

Issue Date: January 1998

12 3 4 5 6 7...35

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与AM28F010-200EIB相关器件

型号	品牌	获取价格	描述	数据表
AM28F010-200FC	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-200FCB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-200FE	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-200FEB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-200FI	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-200FIB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-200JC	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-200JCB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-200JE	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
AM28F010-200JEB	AMD	获取价格	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

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