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ADCLK854 PDF预览

ADCLK854

更新时间: 2024-02-17 18:45:21
品牌 Logo 应用领域
亚德诺 - ADI 时钟
页数 文件大小 规格书
16页 532K
描述
1.8 V, 12-LVDS/24-CMOS Output, Low Power Clock Fanout Buffer

ADCLK854 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QFN
包装说明:HVQCCN,针数:48
Reach Compliance Code:unknown风险等级:5.75
Is Samacsys:N放大器类型:BUFFER
最大平均偏置电流 (IIB):350 µAJESD-30 代码:S-XQCC-N48
JESD-609代码:e3长度:7 mm
湿度敏感等级:NOT APPLICABLE功能数量:1
端子数量:48最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装代码:HVQCCN封装形状:SQUARE
封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度(摄氏度):260
认证状态:COMMERCIAL座面最大高度:1 mm
子类别:Buffer Amplifier供电电压上限:2 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:40
宽度:7 mmBase Number Matches:1

ADCLK854 数据手册

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ADCLK854  
TIMING CHARACTERISTICS  
Table 2. Timing Characteristics  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Conditions  
LVDS OUTPUTS  
Termination = 100 ꢀ differential; 3.5 mA  
20% to 80% measured differentially  
VICM = VREF, VID = 0.5 V  
Output Rise/Fall Time  
Propagation Delay, Clock-to-LVDS Output  
Temperature Coefficient  
Output Skew1  
tR , tF  
tPD  
135  
2.0  
2.0  
235  
2.7  
ps  
ns  
ps/°C  
1.5  
LVDS Outputs in the Same Bank  
All LVDS Outputs  
50  
ps  
On the Same Part  
Across Multiple Parts  
65  
390  
ps  
ps  
Additive Time Jitter  
Integrated Random Jitter  
54  
74  
86  
150  
260  
fs rms  
fs rms  
fs rms  
fs rms  
fs rms  
BW = 12 kHz to 20 MHz; clock = 1000 MHz  
BW = 50 kHz to 80 MHz; clock = 1000 MHz  
BW = 10Hz to 100 MHz; clock = 1000 MHz  
Input slew = 1 V/ns, see Figure 11  
Calculated from spur energy with an  
interferer 10 MHz offset from the carrier  
Broadband Random Jitter2  
Crosstalk Induced Jitter  
CMOS OUTPUTS  
Output Rise/Fall Time  
Propagation Delay, Clock-to-CMOS Output  
Temperature Coefficient  
Output Skew1  
tR, tF  
tPD  
525  
3.2  
2.2  
950  
4.2  
ps  
ns  
ps/°C  
20% to 80%; CLOAD = 10 pF  
10 pF load  
2.5  
CMOS Outputs in the Same Bank  
All CMOS Outputs  
155  
ps  
On the Same Part  
Across Multiple Parts  
175  
640  
ps  
ps  
Additive Time Jitter  
Integrated Random Jitter  
Broadband Random Jitter2  
Crosstalk Induced Jitter  
56  
100  
260  
fs rms  
fs rms  
fs rms  
BW = 12 kHz to 20 MHz; clock = 200 MHz  
Input slew = 2 V/ns, see Figure 11  
Calculated from spur energy with an  
interferer 10 MHz offset from the carrier  
LVDS-TO-CMOS OUTPUT SKEW3  
LVDS Output(s) and CMOS Output(s) on the  
Same Part  
0.8  
1.6  
ns  
CMOS load = 10 pF and LVDS load = 100 Ω  
1 This is the difference between any two similar delay paths while operating at the same voltage and temperature.  
2 Calculated from the SNR of the ADC method.  
3 Measured at the rising edge of the clock signal.  
Rev. 0 | Page 4 of 16  
 
 

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