Datasheet > A2T07H310-24SR6

A2T07H310-24SR6

更新时间： 2024-11-30 01:20:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
24页	763K
描述
N--Channel Enhancement--Mode Lateral MOSFET

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A2T07H310-24SR6 数据手册

Document Number: A2T07H310--24S

Rev. 0, 6/2014

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

A2T07H310--24SR6

This 47 W asymmetrical Doherty RF power LDMOS transistor is designed for

cellular base station applications covering the frequency range of 716 to

960 MHz.

716–960 MHz, 47 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR

870 MHz

•

Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQA= 700 mA, V_GSB= 0.7 Vdc, P_out= 47 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.

Output PAR

(dB)

ACPR

(dBc)

Frequency

851 MHz

865 MHz

880 MHz

(dB)

18.9

18.6

(%)

50.5

51.6

51.3

7.7

–29.8

–30.1

–30.9

800 MHz

•

Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQA= 700 mA, V_GSB= 0.7 Vdc, P_out= 47 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.

NI--1230S--4L2L

Output PAR

(dB)

ACPR

(dBc)

Frequency

790 MHz

806 MHz

822 MHz

(dB)

19.5

19.3

18.9

(%)

50.7

50.8

50.5

(1)

VBW

Carrier

7.7

–30.2

–31.2

–32.3

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

Peaking

Features

(1)

VBW

•

Advanced High Performance In--Package Doherty

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

(Top View)

Figure 1. Pin Connections

•

Designed for Digital Predistortion Error Correction Systems

In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.

1. Device cannot operate with the V current

supplied through pin 3 and pin 6.

A2T07H310--24SR6

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...24

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