Datasheet > A2T14H450-23N

A2T14H450-23N

更新时间： 2024-11-30 01:20:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
17页	602K
描述
N--Channel Enhancement--Mode Lateral MOSFET

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A2T14H450-23N 数据手册

Document Number: A2T14H450--23N

Rev. 0, 01/2017

NXP Semiconductors

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for

cellular base station applications covering the frequency range of 1452 to

1511 MHz.

A2T14H450--23NR6

1500 MHz

1452–1511 MHz, 93 W AVG., 31 V

AIRFAST RF POWER LDMOS

TRANSISTOR

•

Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 31 Vdc,

I_DQA= 1000 mA, V_GSB= 0.5 Vdc, P_out= 93 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.

Output PAR

(dB)

ACPR

(dBc)

Frequency

1452 MHz

1480 MHz

1511 MHz

(dB)

18.8

19.0

(%)

48.2

48.0

48.7

8.1

7.9

7.7

–38.2

–39.2

–38.6

Features

•

Advanced high performance in--package Doherty

Greater negative gate--source voltage range for improved Class C operation

Designed for digital predistortion error correction systems

OM--1230--4L2S

PLASTIC

(1)

VBW

Carrier

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

Peaking

(1)

VBW

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistor.

Figure 1. Pin Connections

1. Device cannot operate with V current

supplied through pin 3 and pin 6.

 2017 NXP B.V.

A2T14H450--23NR6

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...17

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