Datasheet > A2T18H450W19S

A2T18H450W19S

更新时间： 2024-11-28 01:20:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
8页	221K
描述
N--Channel Enhancement--Mode Lateral MOSFET

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A2T18H450W19S 数据手册

Document Number: A2T18H450W19S

Rev. 0, 9/2016

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

A2T18H450W19SR6

This 89 W asymmetrical Doherty RF power LDMOS transistor is designed for

cellular base station applications requiring very wide instantaneous bandwidth

capability covering the frequency range of 1805 to 1880 MHz.

1800 MHz

1805–1880 MHz, 89 W AVG., 30 V

AIRFAST RF POWER LDMOS

TRANSISTOR



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 30 Vdc,

_DQA= 800 mA, V_GSB= 0.9 Vdc, P_out= 89 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

Frequency

1805 MHz

1840 MHz

1880 MHz

(dB)

16.6

16.7

16.5

(%)

47.1

47.5

47.7

7.9

8.0

7.9

–31.4

–32.9

–38.8

Features

NI--1230S--4S4S



Advanced High Performance In--Package Doherty

Designed for Wide Instantaneous Bandwidth Applications

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

Able to Withstand Extremely High Output VSWR and Broadband Operating

Conditions

Designed for Digital Predistortion Error Correction Systems

(2)

VBW



Carrier

(1)

RF /V

outA DSA

inA GSA

RF /V

outB DSB

inB GSB

Peaking

(2)

VBW

(Top View)

Figure 1. Pin Connections

1. Pin connections 6 and 7 are DC coupled

and RF independent.

2. Device cannot operate with the V current

supplied through pins 1, 4, 5, and 8.

A2T18H450W19SR6

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7 8

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