Datasheet > A2T18S260W12N

A2T18S260W12N

更新时间： 2024-11-30 01:21:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	321K
描述
N--Channel Enhancement--Mode Lateral MOSFET

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A2T18S260W12N 数据手册

Document Number: A2T18S260W12N

Rev. 0, 2/2016

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

A2T18S260W12NR3

This 56 W RF power LDMOS transistor is designed for cellular base station

applications requiring very wide instantaneous bandwidth capability covering

the frequency range of 1805 to 1880 MHz.

1800 MHz

1805–1880 MHz, 56 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR



Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQ= 1500 mA, P_out= 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01%

Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

1805 MHz

1840 MHz

1880 MHz

(dB)

18.1

18.5

18.7

(%)

33.1

33.5

34.4

6.9

7.0

6.8

–34.7

–35.1

–34.4

–15

–23

–12

Features

OM--880X--2L2L

PLASTIC



Designed for Wide Instantaneous Bandwidth Applications

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

(1)



Able to Withstand Extremely High Output VSWR and Broadband Operating

Conditions

Optimized for Doherty Applications

VBW

RF /V

in GS

RF /V

out DS

(1)

VBW

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistor.

Figure 1. Pin Connections

1. Device can operate with V current

supplied through pin 2 and pin 4 as long

as the device’s average output power is

less than 90 watts.

A2T18S260W12NR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...14

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