Datasheet > A2T20H160W04N

A2T20H160W04N

更新时间： 2024-11-30 01:21:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
11页	571K
描述
N--Channel Enhancement--Mode Lateral MOSFET

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A2T20H160W04N 数据手册

Document Number: A2T20H160W04N

Rev. 0, 8/2016

NXP Semiconductors

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for

cellular base station applications requiring very wide instantaneous bandwidth

capability covering the frequency range of 1880 to 2025 MHz.

A2T20H160W04NR3

1880–2025 MHz

1880–2025 MHz, 28 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR



Typical Doherty single--carrier W--CDMA performance: V_DD= 28 Vdc,

I_DQA= 400 mA, V_GSB= 0.2 Vdc, P_out= 28 W Avg., input signal

PAR = 9.9 dB @ 0.01% probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

Frequency

1880 MHz

1960 MHz

2025 MHz

(dB)

16.8

17.0

16.5

(%)

45.8

47.7

47.9

8.3

8.2

8.0

–32.5

–33.5

–34.3

Features



Advanced high performance in--package Doherty

Designed for wide instantaneous bandwidth applications

Greater negative gate--source voltage range for improved Class C operation

Able to withstand extremely high output VSWR and broadband operating

conditions

OM--780--4L

PLASTIC



Designed for digital predistortion error correction systems

Carrier

RF /V

outA DSA

inA GSA

(1)

RF /V

inB GSB

RF /V

outB DSB

Peaking

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistor.

Figure 1. Pin Connections

1. Pin connections 1 and 2 are DC coupled

and RF independent.

 2016 NXP B.V.

A2T20H160W04NR3

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...11

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