Datasheet > A2T18H100-25SR3

A2T18H100-25SR3

更新时间： 2024-11-30 01:20:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
24页	743K
描述
N--Channel Enhancement--Mode Lateral MOSFET

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A2T18H100-25SR3 数据手册

Document Number: A2T18H100--25S

Rev. 0, 10/2014

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 18 W asymmetrical Doherty RF power LDMOS transistor is designed for

cellular base station applications covering the frequency range of 1805 to

1995 MHz.

A2T18H100--25SR3

1800 MHz

1805–1995 MHz, 18 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

_DQA= 230 mA, V_GSB= 0.3 Vdc, P_out= 18 W Avg., Input Signal PAR = 9.9 dB

@ 0.01% Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

Frequency

1805 MHz

1840 MHz

1880 MHz

(dB)

18.1

18.2

18.1

(%)

50.2

49.6

49.8

7.7

7.8

7.9

–31.0

–33.0

–34.4

1900 MHz



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQA= 210 mA, V_GSB= 0.3 Vdc, P_out= 18 W Avg., Input Signal PAR = 9.9 dB

@ 0.01% Probability on CCDF.

NI--780S--4L4S



Output PAR

(dB)

ACPR

(dBc)

Frequency

1930 MHz

1960 MHz

1990 MHz

(dB)

18.8

18.7

18.6

(%)

51.0

50.2

50.1

(1)

N.C.

RF /V

VBW

Carrier

8.1

7.9

7.8

–31.3

–32.7

–33.3

RF /V

outA DSA

inA GSA

RF /V

outB DSB

inB GSB

Features

Peaking

(1)

N.C.

VBW



Advanced High Performance In--Package Doherty

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

Designed for Digital Predistortion Error Correction Systems

In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel.

(Top View)

Figure 1. Pin Connections



1. Device cannot operate with the V current

supplied through pin 5 and pin 8.

A2T18H100--25SR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...24

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