Datasheet > A2T18S160W31GSR3

A2T18S160W31GSR3

更新时间： 2024-11-30 01:10:51

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
20页	669K
描述
N--Channel Enhancement--Mode Lateral MOSFETs

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A2T18S160W31GSR3 数据手册

Document Number: A2T18S160W31S

Rev. 0, 5/2015

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

These 32 W RF power LDMOS transistors are designed for cellular base

station applications requiring very wide instantaneous bandwidth capability

covering the frequency range of 1805 to 1995 MHz.

A2T18S160W31SR3

A2T18S160W31GSR3

1800 MHz



Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

_DQ= 1000 mA, P_out= 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01%

1805–1995 MHz, 32 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTORS

Probability on CCDF.



Output PAR ACPR

IRL

Frequency

1805 MHz

1840 MHz

1880 MHz

(dB)

19.6

20.1

19.9

(%)

32.1

31.6

(dB)

(dBc)

–34.7

–35.0

–35.4

(dB)

7.2

–12

–17

–12

7.2

NI--780S--2L2LA

A2T18S160W31SR3

1900 MHz

Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,



I_DQ= 1000 mA, P_out= 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01%

Probability on CCDF.



Output PAR ACPR

IRL

Frequency

1930 MHz

1960 MHz

1995 MHz

(dB)

21.0

21.3

21.6

(%)

32.2

32.9

(dB)

(dBc)

–34.4

–33.9

(dB)

7.5

–17

–19

–12

NI--780GS--2L2LA

A2T18S160W31GSR3

7.4

7.1

Features

(1)

VBW



Designed for Wide Instantaneous Bandwidth Applications

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

RF /V

in GS

RF /V

out DS



Able to Withstand Extremely High Output VSWR and Broadband Operating

Conditions

Optimized for Doherty Applications

(1)

VBW

(Top View)

Figure 1. Pin Connections

1. Device can operate with the V current

supplied through pin 2 or pin 4 alone.

A2T18S160W31SR3 A2T18S160W31GSR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...20

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