Datasheet > A2T09VD300NR1

A2T09VD300NR1

更新时间： 2024-11-28 01:20:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
19页	598K
描述
N--Channel Enhancement--Mode Lateral MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

A2T09VD300NR1 数据手册

Document Number: A2T09VD300N

Rev. 0, 8/2015

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 79 W RF power LDMOS transistor is designed for cellular base station

applications covering the frequency range of 716 to 960 MHz.

A2T09VD300NR1

900 MHz



Typical Single--Carrier W--CDMA Performance: V_DD= 48 Vdc,

I_DQ(A+B)= 1200 mA, P_out= 79 W Avg., Input Signal PAR = 9.9 dB @ 0.01%

Probability on CCDF.

716–960 MHz, 79 W AVG., 48 V

AIRFAST RF POWER LDMOS

TRANSISTOR



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

920 MHz

940 MHz

960 MHz

(dB)

21.5

21.6

21.5

(%)

34.4

34.7

7.1

7.0

6.8

–34.6

–33.5

–33.6

–13

–14

TO--270WB--6A

PLASTIC

800 MHz

Typical Single--Carrier W--CDMA Performance: V_DD= 48 Vdc,

_DQ(A+B)= 1200 mA, P_out= 79 W Avg., Input Signal PAR = 9.9 dB @ 0.01%



Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

Frequency

790 MHz

806 MHz

821 MHz

(dB)

21.4

21.6

(%)

35.3

35.7

36.0

RF /V

outA DSA

inA GSA

7.2

7.1

6.9

–35.1

–34.5

–34.3

–18

–19

–16

GND

RF /V

GND

RF /V

outB DSB

inB GSB

Features



Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

Designed for Digital Predistortion Error Correction Systems

Optimized for Doherty Applications

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistors.



Figure 1. Pin Connections

A2T09VD300NR1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...19

中文翻译

下载PDF

与A2T09VD300NR1相关器件

型号	品牌	获取价格	描述	数据表
A2T14H450-23N	NXP	获取价格	N--Channel Enhancement--Mode Lateral MOSFET
A2T14H450-23NR6	NXP	获取价格	N--Channel Enhancement--Mode Lateral MOSFET
A2T18H100-25S	NXP	获取价格	N--Channel Enhancement--Mode Lateral MOSFET
A2T18H100-25SR3	NXP	获取价格	N--Channel Enhancement--Mode Lateral MOSFET
A2T18H160-24SR3	NXP	获取价格	RF POWER, FET
A2T18H410-24SR6	NXP	获取价格	Airfast RF Power LDMOS Transistor 1805-1880 MHz, 71 W Avg., 28 V
A2T18H450W19S	NXP	获取价格	N--Channel Enhancement--Mode Lateral MOSFET
A2T18H450W19SR6	NXP	获取价格	N--Channel Enhancement--Mode Lateral MOSFET
A2T18H455W23N	NXP	获取价格	N--Channel Enhancement--Mode Lateral MOSFET
A2T18H455W23NR6	NXP	获取价格	N--Channel Enhancement--Mode Lateral MOSFET