Datasheet > 2N7608T2

2N7608T2

更新时间： 2024-01-11 00:28:54

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
9页	209K
描述
Power Field-Effect Transistor, 6A I(D), 100V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN

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技术参数
数据手册

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2N7608T2 技术参数

生命周期：	Active	包装说明：	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.76	雪崩能效等级（Eas）：	37 mJ
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	100 V
最大漏极电流 (ID)：	6 A	最大漏源导通电阻：	0.32 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-205AF
JESD-30 代码：	O-MBCY-W3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	METAL	封装形状：	ROUND
封装形式：	CYLINDRICAL	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	24 A	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	WIRE
端子位置：	BOTTOM	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2N7608T2 数据手册

PD-97062B

2N7608T2

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

THRU-HOLE (TO-39)

IRHLF77110

100V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHLF77110

IRHLF73110

100K Rads (Si) 0.32Ω

300K Rads (Si) 0.32Ω

6.0A

T0-39

International Rectifier’s R7^TMLogic Level Power

MOSFETs provide simple solution to interfacing

CMOS and TTL control circuits to power devices in

space and other radiation environments. The

threshold voltage remains within acceptable

operating limits over the full operating temperature

and post radiation. This is achieved while maintaining

single event gate rupture and single event burnout

immunity.

Features:

5V CMOS and TTL Compatible

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

These devices are used in applications such as

current boost low signal source in PWM, voltage

comparator and operational amplifiers.

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 4.5V, T =25°C

Continuous Drain Current

6.0

= 4.5V, T =100°C Continuous Drain Current

3.7

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.18

±10

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

6.0

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

2.1

V/ns

dv/dt

4.9

-55 to 150

°C

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063in/1.6mm from case for 10s)

0.98 (Typical)

For footnotes refer to the last page

www.irf.com

10/05/10

12 3 4 5 6 7...9

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