Rev 3: Nov 2004
AO3418, AO3418L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3418 uses advanced trench technology to
provide excellent RDS(ON), very low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. AO3418L ( Green Product ) is offered in
a lead-free package.
VDS (V) = 30V
ID = 3.8 A
RDS(ON) < 60mΩ (VGS = 10V)
RDS(ON) < 70mΩ (VGS = 4.5V)
RDS(ON) < 155mΩ (VGS = 2.5V)
TO-236
(SOT-23)
Top View
D
S
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±12
3.8
V
A
TA=25°C
TA=70°C
ID
3.1
Pulsed Drain Current B
IDM
15
TA=25°C
TA=70°C
1.4
PD
W
Power Dissipation A
0.9
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
70
Max
90
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
100
63
125
80
RθJL
Alpha & Omega Semiconductor, Ltd.