Datasheet > 935319257128

935319257128

更新时间： 2024-09-20 21:12:35

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恩智浦 - NXP		/
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13页	543K
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RF Power Field-Effect Transistor

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935319257128 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.68
Base Number Matches：	1

935319257128 数据手册

Document Number: MRFE6S9160H

Rev. 1, 12/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for N-CDMA, GSM and GSM EDGE base station applications

with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier

applications.

MRFE6S9160HR3

MRFE6S9160HSR3

• Typical Single-Carrier N-CDMA. Performance @ 880 MHz: V_DD= 28 Volts,

I_DQ= 1200 mA, P_out= 35 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB

@ 0.01% Probability on CCDF.

Power Gain — 21 dB

Drain Efficiency — 31%

ACPR @ 750 kHz Offset — -46.8 dBc in 30 kHz Bandwidth

880 MHz, 35 W AVG., 28 V

SINGLE N-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,

Designed for Enhanced Ruggedness.

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465-06, STYLE 1

NI-780

MRFE6S9160HR3

CASE 465A-06, STYLE 1

NI-780S

MRFE6S9160HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +66

-0.5, +12

- 65 to +150

150

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

DSS

stg

°C

(1,2)

Operating Junction Temperature

225

°C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 81°C, 160 W CW

Case Temperature 73°C, 35 W CW

0.31

0.33

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRFE6S9160HR3 MRFE6S9160HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...13

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