Datasheet > 935319266528

935319266528

更新时间： 2024-11-10 21:11:43

品牌	Logo	应用领域
恩智浦 - NXP		高功率电源射频微波
页数	文件大小	规格书
20页	618K
描述
Wide Band High Power Amplifier

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935319266528 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
射频/微波设备类型：	WIDE BAND HIGH POWER	Base Number Matches：	1

935319266528 数据手册

Document Number: MWIC930N

Rev. 6, 5/2006

Freescale Semiconductor

Technical Data

RF LDMOS Wideband Integrated

Power Amplifiers

The MWIC930N wideband integrated circuit is designed for CDMA and

GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage (26 to

28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its

wideband On-Chip integral matching circuitry makes it usable from 790 to

1000 MHz. The linearity performances cover all modulations for cellular

applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA.

MWIC930NR1

MWIC930GNR1

746-960 MHz, 30 W, 26-28 V

SINGLE N-CDMA, GSM/GSM EDGE

RF LDMOS WIDEBAND INTEGRATED

POWER AMPLIFIERS

Final Application

• Typical Performance @ P1dB: V_DD= 26 Volts, I_DQ1= 90 mA, I_DQ2

240 mA, P_out= 30 Watts P1dB, Full Frequency Band (921-960 MHz)

Power Gain — 30 dB

Power Added Efficiency — 45%

Driver Application

• Typical Single-Carrier N-CDMA Performance: V_DD= 27 Volts, I_DQ1

90 mA, I_DQ2= 240 mA, P_out= 5 Watts Avg., Full Frequency Band

(865-894 MHz), IS -95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13),

Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%

Probability on CCDF.

CASE 1329-09

TO-272 WB-16

PLASTIC

Power Gain — 31 dB

Power Added Efficiency — 21%

ACPR @ 750 kHz Offset — -52 dBc in 30 kHz Bandwidth

MWIC930NR1

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output

Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• On-Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output)

• Integrated Quiescent Current Temperature Compensation with

Enable/Disable Function

CASE 1329A-03

TO-272 WB-16 GULL

PLASTIC

• On-Chip Current Mirror g_mReference FET for Self Biasing Application ⁽¹⁾

• Integrated ESD Protection

• 200°C Capable Plastic Package

MWIC930GNR1

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

RD2

GND

RG2

RD2

RG2

DS1

RD1

out/

DS2

/RF

DS2 out

RG1

GS1

GS2

RD1

GND

RG1

GND

(Top View)

GS1

GS2

Quiescent Current

Temperature Compensation

Note: Exposed backside flag is source

terminal for transistors.

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1987.

MWIC930NR1 MWIC930GNR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...20

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