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935304545125 PDF预览

935304545125

更新时间: 2024-11-08 04:47:11
品牌 Logo 应用领域
恩智浦 - NXP 输入元件光电二极管逻辑集成电路
页数 文件大小 规格书
15页 106K
描述
IC GATE NOR 1CH 2INPUT 5TSSOP

935304545125 数据手册

 浏览型号935304545125的Datasheet PDF文件第2页浏览型号935304545125的Datasheet PDF文件第3页浏览型号935304545125的Datasheet PDF文件第4页浏览型号935304545125的Datasheet PDF文件第5页浏览型号935304545125的Datasheet PDF文件第6页浏览型号935304545125的Datasheet PDF文件第7页 
74AUP1G02-Q100  
Low-power 2-input NOR gate  
Rev. 1 — 4 June 2014  
Product data sheet  
1. General description  
The 74AUP1G02-Q100 provides the single 2-input NOR function.  
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall  
times across the entire VCC range from 0.8 V to 3.6 V.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial Power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
This product has been qualified to the Automotive Electronics Council (AEC) standard  
Q100 (Grade 1) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 1)  
Specified from 40 C to +85 C and from 40 C to +125 C  
Wide supply voltage range from 0.8 V to 3.6 V  
High noise immunity  
Complies with JEDEC standards:  
JESD8-12 (0.8 V to 1.3 V)  
JESD8-11 (0.9 V to 1.65 V)  
JESD8-7 (1.2 V to 1.95 V)  
JESD8-5 (1.8 V to 2.7 V)  
JESD8-B (2.7 V to 3.6 V)  
ESD protection:  
MIL-STD-883, method 3015 Class 3A. Exceeds 5000 V  
HBM JESD22-A114F Class 3A. Exceeds 5000 V  
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )  
Low static power consumption; ICC = 0.9 A (maximum)  
Latch-up performance exceeds 100 mA per JESD 78 Class II  
Inputs accept voltages up to 3.6 V  
Low noise overshoot and undershoot < 10 % of VCC  
IOFF circuitry provides partial Power-down mode operation  

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