Datasheet > 934064445112

934064445112

更新时间： 2024-11-11 21:14:55

品牌	Logo	应用领域
恩智浦 - NXP		局域网放大器晶体管
页数	文件大小	规格书
16页	331K
描述
VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

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技术参数
数据手册

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934064445112 技术参数

生命周期：	Active	包装说明：	ROHS COMPLIANT, CERAMIC PACKAGE-2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.76	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	110 V
最大漏极电流 (ID)：	42 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高频带：	VERY HIGH FREQUENCY BAND	JESD-30 代码：	R-CDFM-F2
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

934064445112 数据手册

BLF573; BLF573S

HF / VHF power LDMOS transistor

Rev. 3 — 8 July 2010

Product data sheet

1. Product profile

1.1 General description

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific

and medical applications in the HF to 500 MHz band.

Table 1.

Production test information

Mode of operation

V_DS

(V)

P_L

G_p

η_D

(MHz)

225

(W)

300

(dB)

27.2

(%)

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an

_Dqof 900 mA:

Average output power = 300 W

Power gain = 27.2 dB

Efficiency = 70 %

Easy power control

Integrated ESD protection

Excellent ruggedness

High efficiency

Excellent thermal stability

Designed for broadband operation (HF and VHF band)

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

Industrial, scientific and medical applications

Broadcast transmitter applications

12 3 4 5 6 7...16

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