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934054715215 PDF预览

934054715215

更新时间: 2024-11-21 14:51:15
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
7页 145K
描述
TRANSISTOR 1210 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal

934054715215 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:TransferredReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.07
其他特性:LOW THRESHOLD, LOGIC LEVEL COMPATIBLE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):1.21 A
最大漏源导通电阻:0.25 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

934054715215 数据手册

 浏览型号934054715215的Datasheet PDF文件第2页浏览型号934054715215的Datasheet PDF文件第3页浏览型号934054715215的Datasheet PDF文件第4页浏览型号934054715215的Datasheet PDF文件第5页浏览型号934054715215的Datasheet PDF文件第6页浏览型号934054715215的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
N-channel enhancement mode  
MOS transistor  
BSH105  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
d
• Very low threshold voltage  
• Fast switching  
VDS = 20 V  
• Logic level compatible  
• Subminiature surface mount  
package  
ID = 1.05 A  
R
DS(ON) 250 m(VGS = 2.5 V)  
g
VGS(TO) 0.4 V  
s
GENERAL DESCRIPTION  
PINNING  
SOT23  
N-channel, enhancement mode,  
logic level, field-effect power  
transistor. This device has very low  
threshold voltage and extremely  
fast switching making it ideal for  
battery powered applications and  
high speed digital interfacing.  
PIN  
DESCRIPTION  
3
1
2
3
gate  
Top view  
source  
drain  
1
2
The BSH105 is supplied in the  
SOT23  
subminiature  
surface  
mounting package.  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
VGS  
ID  
Drain-source voltage  
-
-
-
-
-
-
-
-
20  
20  
± 8  
1.05  
0.67  
4.2  
0.417  
0.17  
150  
V
V
V
A
A
Drain-gate voltage  
Gate-source voltage  
Drain current (DC)  
RGS = 20 kΩ  
Ta = 25 ˚C  
Ta = 100 ˚C  
Ta = 25 ˚C  
Ta = 25 ˚C  
Ta = 100 ˚C  
IDM  
Ptot  
Drain current (pulse peak value)  
Total power dissipation  
A
W
W
˚C  
Tstg, Tj  
Storage & operating temperature  
- 55  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
Rth j-a  
Thermal resistance junction to  
ambient  
FR4 board, minimum  
footprint  
300  
-
K/W  
August 1998  
1
Rev 1.000  

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