是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.07 |
其他特性: | LOW THRESHOLD, LOGIC LEVEL COMPATIBLE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 1.21 A |
最大漏源导通电阻: | 0.25 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
934054715235 | NXP |
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TRANSISTOR 1210 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small S | |
934054717235 | NXP |
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TRANSISTOR 340 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si | |
934054718215 | NXP |
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TRANSISTOR 570 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si | |
934054718235 | NXP |
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TRANSISTOR 570 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si | |
934054719215 | NXP |
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TRANSISTOR 570 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si | |
934054728118 | NXP |
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TRANSISTOR 10.3 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SMD, S | |
934054743113 | NXP |
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DIODE 0.05 A, 3000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diod | |
934054752118 | NXP |
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DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, PLASTIC, SMD, D2PAK-3, Rectifier Diode | |
934054765118 | NXP |
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20A, 20V, SILICON, RECTIFIER DIODE | |
934054766118 | NXP |
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20A, 25V, SILICON, RECTIFIER DIODE |