Datasheet > 934054768127

934054768127

更新时间： 2024-11-22 03:10:51

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
8页	65K
描述
7.5A, 25V, SILICON, RECTIFIER DIODE, TO-220AB

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934054768127 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYL1525CT, PBYL1525CTB series

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

• Reverse surge capability

• High thermal cycling performance

• Low thermal resistance

V_R= 20 V/ 25 V

I_O(AV)= 15 A

V_F≤ 0.42 V

GENERAL DESCRIPTION

Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power

supplies.

The PBYL1525CT series is supplied in the SOT78 (TO220AB) conventional leaded package.

The PBYL1525CTB series is supplied in the SOT404 surface mounting package.

PINNING

SOT78 (TO220AB)

SOT404

DESCRIPTION

tab

gate

drain ¹

source

drain

tab

1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS

MIN.

MAX.

UNIT

PBYL15

20CT

25CT

25CTB

20CTB

V_RRM

V_RWM

Peak repetitive reverse

voltage

Working peak reverse

voltage

Continuous reverse voltage

V_R

_mb≤ 107 ˚C

I_O(AV)

Average rectified output

current (both diodes

conducting)

square wave; δ = 0.5; T_mb≤ 127 ˚C

I_FRM

I_FSM

Repetitive peak forward

current per diode

square wave; δ = 0.5; T_mb≤ 127 ˚C

Non-repetitive peak forward t = 10 ms

100

current per diode

t = 8.3 ms

sinusoidal; T_j= 125 ˚C prior to

surge; with reapplied V_RRM(max)

pulse width and repetition rate

limited by T_{j max}

I_RRM

T_j

Peak repetitive reverse

surge current per diode

Operating junction

temperature

150

175

˚C

T_stg

Storage temperature

- 65

1. It is not possible to make connection to pin 2 of the SOT404 package.

March 1998

Rev 1.000

12 3 4 5 6 7 8

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