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934054769118

更新时间: 2024-11-21 18:54:19
品牌 Logo 应用领域
恩智浦 - NXP 二极管
页数 文件大小 规格书
8页 65K
描述
7.5A, 20V, SILICON, RECTIFIER DIODE

934054769118 技术参数

生命周期:Obsolete包装说明:R-PSSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSSO-G2
最大非重复峰值正向电流:100 A元件数量:2
相数:1端子数量:2
最大输出电流:7.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:20 V
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:SINGLE
Base Number Matches:1

934054769118 数据手册

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Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYL1525CT, PBYL1525CTB series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Reverse surge capability  
• High thermal cycling performance  
• Low thermal resistance  
VR = 20 V/ 25 V  
a1  
1
a2  
3
IO(AV) = 15 A  
k
2
VF 0.42 V  
GENERAL DESCRIPTION  
Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power  
supplies.  
The PBYL1525CT series is supplied in the SOT78 (TO220AB) conventional leaded package.  
The PBYL1525CTB series is supplied in the SOT404 surface mounting package.  
PINNING  
SOT78 (TO220AB)  
SOT404  
PIN  
DESCRIPTION  
tab  
tab  
1
2
gate  
drain 1  
3
source  
drain  
2
tab  
1 2 3  
1
3
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
PBYL15  
PBYL15  
20CT  
25CT  
25CTB  
25  
20CTB  
VRRM  
VRWM  
Peak repetitive reverse  
-
-
20  
V
V
voltage  
Working peak reverse  
voltage  
Continuous reverse voltage  
20  
20  
25  
25  
VR  
T
mb 107 ˚C  
-
-
V
A
IO(AV)  
Average rectified output  
current (both diodes  
conducting)  
square wave; δ = 0.5; Tmb 127 ˚C  
15  
15  
IFRM  
IFSM  
Repetitive peak forward  
current per diode  
square wave; δ = 0.5; Tmb 127 ˚C  
-
A
Non-repetitive peak forward t = 10 ms  
-
-
90  
100  
A
A
current per diode  
t = 8.3 ms  
sinusoidal; Tj = 125 ˚C prior to  
surge; with reapplied VRRM(max)  
pulse width and repetition rate  
limited by Tj max  
IRRM  
Tj  
Peak repetitive reverse  
surge current per diode  
Operating junction  
temperature  
-
-
1
A
150  
175  
˚C  
˚C  
Tstg  
Storage temperature  
- 65  
1. It is not possible to make connection to pin 2 of the SOT404 package.  
March 1998  
1
Rev 1.000  

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