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934054793127 PDF预览

934054793127

更新时间: 2024-11-25 21:21:27
品牌 Logo 应用领域
恩智浦 - NXP 局域网开关晶体管
页数 文件大小 规格书
7页 54K
描述
10A, 800V, NPN, Si, POWER TRANSISTOR, PLASTIC, SOT-399, 3 PIN

934054793127 技术参数

生命周期:Obsolete包装说明:PLASTIC, SOT-399, 3 PIN
Reach Compliance Code:unknown风险等级:5.84
外壳连接:ISOLATED最大集电极电流 (IC):10 A
集电极-发射极最大电压:800 V配置:SINGLE
最小直流电流增益 (hFE):4.2JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

934054793127 数据手册

 浏览型号934054793127的Datasheet PDF文件第2页浏览型号934054793127的Datasheet PDF文件第3页浏览型号934054793127的Datasheet PDF文件第4页浏览型号934054793127的Datasheet PDF文件第5页浏览型号934054793127的Datasheet PDF文件第6页浏览型号934054793127的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Silicon Diffused Power Transistor  
BU4522AX  
GENERAL DESCRIPTION  
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in  
horizontal deflection circuits of colour TV receivers and PC monitors.  
QUICK REFERENCE DATA  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
VCESM  
VCEO  
IC  
Collector-emitter voltage peak value  
VBE = 0 V  
-
1500  
800  
10  
V
V
Collector-emitter voltage (open base)  
Collector current (DC)  
-
-
A
ICM  
Collector current peak value  
Total power dissipation  
Collector-emitter saturation voltage  
Collector saturation current (Fig 17)  
-
-
25  
A
Ptot  
VCEsat  
ICsat  
Ths 25 ˚C  
45  
W
V
IC = 7 A; IB = 1.75 A  
f = 16 kHz  
-
3.0  
-
7
A
A
f = 64 kHz  
6
-
tf  
Fall time  
ICsat = 7 A; f = 16 kHz  
ICsat = 6 A; f = 64 kHz  
285  
170  
400  
230  
ns  
ns  
PINNING - SOT399  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
case  
c
base  
2
collector  
emitter  
b
3
case isolated  
1
2 3  
e
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN. MAX. UNIT  
VCESM  
VCEO  
IC  
Collector-emitter voltage peak value  
VBE = 0 V  
-
1500  
800  
10  
25  
6
V
V
Collector-emitter voltage (open base)  
Collector current (DC)  
-
-
A
ICM  
IB  
Collector current peak value  
Base current (DC)  
-
A
-
A
IBM  
Base current peak value  
Reverse base current peak value 1  
Total power dissipation  
-
9
A
-IBM  
Ptot  
Tstg  
Tj  
-
-
6
A
Ths 25 ˚C  
45  
150  
150  
W
˚C  
˚C  
Storage temperature  
Junction temperature  
-55  
-
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
Rth j-hs  
Rth j-a  
Junction to heatsink  
Junction to ambient  
with heatsink compound  
in free air  
-
2.8  
-
K/W  
K/W  
35  
1 Turn-off current.  
December 1997  
1
Rev 1.000  

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