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934054728118 PDF预览

934054728118

更新时间: 2024-11-21 14:50:27
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲晶体管
页数 文件大小 规格书
14页 317K
描述
TRANSISTOR 10.3 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power

934054728118 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-252AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.14
雪崩能效等级(Eas):25 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):10.3 A最大漏源导通电阻:0.15 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):41 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

934054728118 数据手册

 浏览型号934054728118的Datasheet PDF文件第2页浏览型号934054728118的Datasheet PDF文件第3页浏览型号934054728118的Datasheet PDF文件第4页浏览型号934054728118的Datasheet PDF文件第5页浏览型号934054728118的Datasheet PDF文件第6页浏览型号934054728118的Datasheet PDF文件第7页 
PHP/PHD3055E  
TrenchMOS™ standard level FET  
Rev. 06 — 25 March 2002  
Product data  
1. Description  
N-channel standard level field-effect power transistor in a plastic package using  
TrenchMOS™1 technology.  
Product availability:  
PHP3055E in SOT78 (TO-220AB)  
PHD3055E in SOT428 (D-PAK).  
2. Features  
Fast switching  
Low on-state resistance.  
3. Applications  
DC to DC converters  
Switch mode power supplies.  
4. Pinning information  
Table 1: Pinning - SOT78, SOT428 simplified outline and symbol  
Pin Description  
Simplified outline  
Symbol  
1
2
3
gate (g)  
d
s
mb  
mb  
[1]  
drain (d)  
source (s)  
g
mb mounting base,  
connected to drain (d)  
MBB076  
2
1
3
Top view  
MBK091  
MBK106  
1
2 3  
SOT78 (TO-220AB)  
SOT428 (D-PAK)  
[1] It is not possible to make connection to pin 2 of the SOT428 package.  
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.  

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