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934054752118 PDF预览

934054752118

更新时间: 2024-11-21 19:57:35
品牌 Logo 应用领域
恩智浦 - NXP 超快恢复二极管快速恢复二极管
页数 文件大小 规格书
6页 45K
描述
DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, PLASTIC, SMD, D2PAK-3, Rectifier Diode

934054752118 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-263
包装说明:PLASTIC, SMD, D2PAK-3针数:3
Reach Compliance Code:unknownHTS代码:8541.10.00.80
风险等级:5.42其他特性:FREE WHEELING DIODE
应用:ULTRA FAST RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSSO-G2
最大非重复峰值正向电流:60 A元件数量:1
相数:1端子数量:2
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.052 µs
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

934054752118 数据手册

 浏览型号934054752118的Datasheet PDF文件第2页浏览型号934054752118的Datasheet PDF文件第3页浏览型号934054752118的Datasheet PDF文件第4页浏览型号934054752118的Datasheet PDF文件第5页浏览型号934054752118的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Rectifier diode  
ultrafast, low switching loss  
BYC8B-600  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
VR = 600 V  
• Extremely fast switching  
• Low reverse recovery current  
• Low thermal resistance  
• Reduces switching losses in  
associated MOSFET  
VF 1.85 V  
k
tab  
a
3
IF(AV) = 8 A  
trr = 19 ns (typ)  
APPLICATIONS  
PINNING  
SOT404  
• Active power factor correction  
• Half-bridge lighting ballasts  
• Half-bridge/ full-bridge switched  
mode power supplies.  
PIN  
DESCRIPTION  
no connection  
cathode1  
tab  
1
2
The BYC8B-600 is supplied in the  
SOT404 surface mounting  
package.  
3
anode  
2
tab  
cathode  
1
3
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
VRRM  
VRWM  
VR  
Peak repetitive reverse voltage  
-
-
-
-
600  
600  
500  
8
V
V
V
A
Crest working reverse voltage  
Continuous reverse voltage  
Average forward current  
T
mb 110 ˚C  
δ = 0.5; with reapplied VRRM(max)  
mb 82 ˚C  
Repetitive peak forward current δ = 0.5; with reapplied VRRM(max)  
IF(AV)  
;
;
T
IFRM  
IFSM  
-
16  
A
T
mb 82 ˚C  
Non-repetitive peak forward  
current.  
t = 10 ms  
t = 8.3 ms  
-
-
55  
60  
A
A
sinusoidal; Tj = 150˚C prior to surge  
with reapplied VRWM(max)  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance junction to  
mounting base  
Thermal resistance junction to minimum footprint, FR4 board  
ambient  
-
-
-
2.2  
-
K/W  
K/W  
50  
1 it is not possible to make connection to pin 2 of the SOT404 package  
March 2001  
1
Rev 1.400  

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