Datasheet > 934054718235

934054718235

更新时间： 2024-11-22 05:14:35

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
9页	170K
描述
TRANSISTOR 570 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal

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934054718235 数据手册

Philips Semiconductors

Product specification

P-channel enhancement mode

MOS transistor

BSH202

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low threshold voltage

• Fast switching

V_DS= -30 V

• Logic level compatible

• Subminiature surface mount

package

I_D= -0.52 A

_DS(ON)≤ 0.9 Ω (V_GS= -10 V)

GENERAL DESCRIPTION

PINNING

SOT23

P-channel, enhancement mode,

logic level, field-effect power

transistor. This device has low

threshold voltage and extremely

fast switching making it ideal for

battery powered applications and

high speed digital interfacing.

DESCRIPTION

gate

Top view

source

drain

The BSH202 is supplied in the

SOT23

subminiature

surface

mounting package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_DGR

V_GS

I_D

Drain-source voltage

-30

± 20

-0.52

-0.33

-2.1

0.417

0.17

150

Drain-gate voltage

Gate-source voltage

Drain current (DC)

R_GS= 20 kΩ

T_a= 25 ˚C

T_a= 100 ˚C

T_a= 25 ˚C

T_a= 100 ˚C

I_DM

P_tot

Drain current (pulse peak value)

Total power dissipation

˚C

T_stg, T_j

Storage & operating temperature

- 55

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R_{th j-a}

Thermal resistance junction to

ambient

FR4 board, minimum

footprint

300

K/W

August 1998

Rev 1.000

12 3 4 5 6 7...9

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