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934054020118

更新时间： 2024-11-22 08:26:31
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
7页 67K
描述
5A, 40V, SILICON, RECTIFIER DIODE

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934054020118 数据手册

 浏览型号934054020118的Datasheet PDF文件第2页浏览型号934054020118的Datasheet PDF文件第3页浏览型号934054020118的Datasheet PDF文件第4页浏览型号934054020118的Datasheet PDF文件第5页浏览型号934054020118的Datasheet PDF文件第6页浏览型号934054020118的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYR645CT series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Reverse surge capability  
• High thermal cycling performance  
• Low thermal resistance  
VR = 35 V/ 40 V/ 45 V  
IO(AV) = 10 A  
a1  
1
a2  
3
k
2
VF ≤ 0.6V  
GENERAL DESCRIPTION  
PINNING  
SOT82  
Dual, common cathode schottky  
PIN  
DESCRIPTION  
anode 1  
cathode  
rectifier diodes in  
a
plastic  
envelope. Intended for use as  
output rectifiers in low voltage, high  
frequency switched mode power  
supplies.  
1
2
3
anode 2  
cathode  
The PBYR645CT series is supplied  
in the conventional leaded SOT82  
package.  
tab  
2
3
1
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
PBYR6  
35CT 40CT 45CT  
VRRM  
VRWM  
Peak repetitive reverse  
-
-
35  
35  
35  
40  
45  
45  
45  
V
V
voltage  
Working peak reverse  
voltage  
Continuous reverse voltage  
40  
VR  
T
mb ≤ 100 ˚C  
-
-
40  
10  
V
A
IO(AV)  
Average rectified output  
current (both diodes  
conducting)  
square wave; δ = 0.5; Tmb ≤ 119 ˚C  
IFRM  
IFSM  
Repetitive peak forward  
current per diode  
square wave; δ = 0.5; Tmb ≤ 119 ˚C  
-
10  
A
Non-repetitive peak forward t = 10 ms  
-
-
75  
82  
A
A
current diode  
t = 8.3 ms  
sinusoidal; Tj = 125 ˚C prior to  
surge; with reapplied VRRM(max)  
pulse width and repetition rate  
limited by Tj max  
IRRM  
Tj  
Peak repetitive reverse  
surge current per diode  
Operating junction  
temperature  
-
-
1
A
150  
150  
˚C  
˚C  
Tstg  
Storage temperature  
- 65  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance junction per diode  
-
-
-
-
-
5
4
-
K/W  
K/W  
K/W  
to mounting base  
both diodes  
Thermal resistance junction in free air  
to ambient  
100  
May 1998  
1
Rev 1.200  
1234567

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