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74V1G66CTR PDF预览

74V1G66CTR

更新时间: 2024-11-03 22:32:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 开关
页数 文件大小 规格书
9页 70K
描述
SINGLE BILATERAL SWITCH

74V1G66CTR 数据手册

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74V1G66  
SINGLE BILATERAL SWITCH  
HIGH SPEED:  
tPD =0.3 ns (TYP.)at VCC =5V  
t
PD =0.4 ns (TYP.)at VCC =3.3V  
LOW POWER DISSIPATION:  
CC =1 µA (MAX.) at TA =25 oC  
LOWON” RESISTANCE:  
I
SOT23-5L  
SC-70  
µ
RON =10 (TYP.)AT VCC = 5.0VII/O=100 A  
ON =12(TYP.)AT VCC = 3.3VII/O=100µA  
ORDER CODES  
TUBE  
R
PACKAGE  
SOT23-5L  
SC-70  
T & R  
SINE WAVE DISTORTION  
74V1G66S-TR  
74V1G66C-TR  
0.04%(TYP.)AT VCC=3.3Vf=1KHz  
WIDE OPERATINGVOLTAGERANGE:  
VCC (OPR)= 2V to 5V  
power-supply range (from Vcc to Ground).  
The C input is provided to control the switch and  
it’s compatible with standard CMOS output; the  
switch is ON when the C input is held high and off  
when C is held low. It can be used in many  
application as Battery Powered System, Audio  
Signal Routing, Communications System, Test  
Equipment. It’s available in the commercial  
temperature range in SOT23-5L and SC-70-5L  
package.  
DESCRIPTION  
The 74V1G66 is an high-speed CMOS SINGLE  
BILATERAL SWITCH fabricated in silicon gate  
C2MOS technology. It achieves high speed  
propagation delay and VERY LOW ON  
resistances while maintaining true CMOS low  
power consumption. This feature makes this part  
ideal for battery-powered equipment. This  
bilateral switch handles rail to rail analog and  
digital signals that may vary across the full  
PIN CONNECTION AND IEC LOGIC SYMBOLS  
1/9  
June 2000  

74V1G66CTR 替代型号

型号 品牌 替代类型 描述 数据表
MC74VHC1G66DTT1G ONSEMI

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