5秒后页面跳转
74AHC3G14DP-Q100 PDF预览

74AHC3G14DP-Q100

更新时间: 2024-11-06 01:07:51
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管逻辑集成电路
页数 文件大小 规格书
15页 257K
描述
Automotive product qualification in accordance with AEC-Q100

74AHC3G14DP-Q100 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TSSOP,Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.63
系列:AHC/VHC/H/U/VJESD-30 代码:S-PDSO-G8
JESD-609代码:e4长度:3 mm
逻辑集成电路类型:INVERTER湿度敏感等级:1
功能数量:3输入次数:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
传播延迟(tpd):20.5 ns筛选级别:AEC-Q100
座面最大高度:1.1 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:3 mmBase Number Matches:1

74AHC3G14DP-Q100 数据手册

 浏览型号74AHC3G14DP-Q100的Datasheet PDF文件第2页浏览型号74AHC3G14DP-Q100的Datasheet PDF文件第3页浏览型号74AHC3G14DP-Q100的Datasheet PDF文件第4页浏览型号74AHC3G14DP-Q100的Datasheet PDF文件第5页浏览型号74AHC3G14DP-Q100的Datasheet PDF文件第6页浏览型号74AHC3G14DP-Q100的Datasheet PDF文件第7页 
74AHC3G14-Q100;  
74AHCT3G14-Q100  
Triple inverting Schmitt trigger  
Rev. 4 — 4 December 2018  
Product data sheet  
1. General description  
74AHC3G14-Q100 and 74AHCT3G14-Q100 are high-speed Si-gate CMOS devices. They provide  
three inverting buffers with Schmitt trigger action. These devices are capable of transforming slowly  
changing input signals into sharply defined, jitter-free output signals.  
The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.  
The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.  
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100  
(Grade 1) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 1)  
Specified from -40 °C to +85 °C and from -40 °C to +125 °C  
Symmetrical output impedance  
High noise immunity  
ESD protection:  
MIL-STD-883, method 3015 exceeds 2000 V  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V (C = 200 pF; R = 0 Ω)  
Low power dissipation  
Balanced propagation delays  
Multiple package options  
3. Applications  
Wave and pulse shaper for highly noisy environment  
Astable multivibrator  
Monostable multivibrator  
4. Ordering information  
Table 1. Ordering information  
Type number  
Package  
Temperature range Name  
Description  
Version  
74AHC3G14DP-Q100  
74AHCT3G14DP-Q100  
74AHC3G14DC-Q100  
74AHCT3G14DC-Q100  
-40 °C to +125 °C  
TSSOP8 plastic thin shrink small outline package; 8 leads; SOT505-2  
body width 3 mm; lead length 0.5 mm  
-40 °C to +125 °C  
VSSOP8 plastic very thin shrink small outline package;  
8 leads; body width 2.3 mm  
SOT765-1  
 
 
 
 

与74AHC3G14DP-Q100相关器件

型号 品牌 获取价格 描述 数据表
74AHC3G14DP-Q100H NXP

获取价格

74AHC(T)3G14-Q100 - Triple inverting Schmitt trigger TSSOP 8-Pin
74AHC3G14GD NXP

获取价格

Inverting Schmitt trigger
74AHC3G14GM NXP

获取价格

Inverting Schmitt trigger
74AHC3G14GT NXP

获取价格

暂无描述
74AHC3G14GT NEXPERIA

获取价格

Triple inverting Schmitt triggerProduction
74AHC3G14-Q100 NEXPERIA

获取价格

Automotive product qualification in accordance with AEC-Q100
74AHC3GU04 NXP

获取价格

high-speed Si-gate CMOS device
74AHC3GU04DC NXP

获取价格

high-speed Si-gate CMOS device
74AHC3GU04DC NEXPERIA

获取价格

Triple unbuffered inverterProduction
74AHC3GU04DC,125 NXP

获取价格

74AHC3GU04 - Inverter SSOP 8-Pin