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74AHC3GU04DC PDF预览

74AHC3GU04DC

更新时间: 2024-11-06 11:12:51
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管逻辑集成电路
页数 文件大小 规格书
13页 228K
描述
Triple unbuffered inverterProduction

74AHC3GU04DC 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:VSSOP,Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.51
系列:AHC/VHC/H/U/VJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:2.3 mm
逻辑集成电路类型:INVERTER湿度敏感等级:1
功能数量:3输入次数:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:VSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
传播延迟(tpd):13.5 ns认证状态:Not Qualified
座面最大高度:1 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:2 mmBase Number Matches:1

74AHC3GU04DC 数据手册

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74AHC3GU04  
Triple unbuffered inverter  
Rev. 6 — 27 February 2019  
Product data sheet  
1. General description  
The 74AHC3GU04 is a high-speed Si-gate CMOS device. This device provides three inverter gates  
with unbuffered outputs.  
2. Features and benefits  
Symmetrical output impedance  
High noise immunity  
ESD protection:  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V  
CDM JESD22-C101D exceeds 1000 V  
Low power dissipation  
Balanced propagation delays  
Specified from -40 °C to +85 °C and from -40 °C to +125 °C  
3. Ordering information  
Table 1. Ordering information  
Type number  
Package  
Temperature range Name  
Description  
Version  
74AHC3GU04DP  
74AHC3GU04DC  
-40 °C to +125 °C  
TSSOP8 plastic thin shrink small outline package;  
8 leads; body width 3 mm; lead length 0.5 mm  
SOT505-2  
-40 °C to +125 °C  
VSSOP8 plastic very thin shrink small outline package;  
8 leads; body width 2.3 mm  
SOT765-1  
4. Marking  
Table 2. Marking codes  
Type number  
Marking code [1]  
74AHC3GU04DP  
74AHC3GU04DC  
AU4  
AU4  
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.  
 
 
 
 
 

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