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71V546S133PF8 PDF预览

71V546S133PF8

更新时间: 2023-01-03 05:17:34
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器
页数 文件大小 规格书
21页 997K
描述
ZBT SRAM, 128KX36, 4.2ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100

71V546S133PF8 数据手册

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IDT71V546, 128K x 36, 3.3V Synchronous SRAM with  
ZBTFeature, Burst Counter and Pipelined Outputs  
Commercial and Industrial Temperature Ranges  
PinDefinitions(1)  
Symbol  
Pin Function  
I/O  
Active  
Description  
Address Inputs  
I
N/A  
Synchronous Address inputs. The address register is triggered by a  
combination of the rising edge of CLK and ADV/LD Low, CEN Low and true  
chip enables.  
A0 - A16  
Address/Load  
I
N/A  
ADV/LD is a synchronous input that is used to load the internal registers with  
new address and control when it is sampled low at the rising edge of clock with  
the chip selected. When ADV/LD is low with the chip deselected, any burst in  
progress is terminated. When ADV/LD is sampled high then the internal burst  
counter is advanced for any burst that was in progress. The external addresses  
are ignored when ADV/LD is sampled high.  
ADV/LD  
Read/Write  
I
I
N/A  
R/W signal is a synchronous input that identified whether the current load cycle  
initiated is a Read or Write access to the memory array. The data bus activity for  
the current cycle takes place two clock cycles later.  
R/W  
Clock Enable  
LOW  
Synchronous Clock Enable Input. When CEN is sampled high, all other  
synchronous inputs, including clock are ignored and outputs remain unchanged.  
The effect of CEN sampled high on the device outputs is as if the low to high  
clock transition did not occur. For normal operation, CEN must be sampled low  
at rising edge of clock.  
CEN  
Individual Byte  
Write Enables  
I
I
LOW  
LOW  
Synchronous byte write enables. Enable 9-bit byte has its own active low byte  
BW  
1
- BW  
4
write enable. On load write cycles (When R/W and ADV/LD are sampled low)  
the appropriate byte write signal (BW  
1
- BW4) must be valid. The byte write  
signal must also be valid on each cycle of a burst write. Byte Write signals are  
ignored when R/W is sampled high. The appropriate byte(s) of data are written  
into the device two cycles later. BW  
1
- BW4 can all be tied low if always doing  
write to the entire 36-bit word.  
Chip Enables  
Synchronous active low chip enable. CE  
1
and CE  
2
are used with CE  
2 to  
CE  
1
, CE  
2
enable the IDT71V546. (CE or CE sampled high or CE  
1
2
2
sampled low) and  
ADV/LD low at the rising edge of clock, initiates a deselect cycle. the ZBT  
has a two cycle deselect, i.e., the data bus will tri-state two clock cycles after  
deselect is initiated.  
CE2  
CLK  
Chip Enable  
Clock  
I
I
HIGH  
N/A  
Synchronout active high chip enable. CE  
2
is used with CE  
1
and CE  
2 to enable  
the chip. CE has inverted polarity but otherwise identical to CE  
2
1
and CE2.  
This is the clock input to the IDT71V546. Except for OE, all timing references for  
the device are made with respect to the rising edge of CLK.  
I/O  
I/OP1 - I/OP4  
0
- I/O31  
Data Input/Output  
I/O  
I
N/A  
Synchronous data input/output (I/O) pins. Both the data input path and data  
output path are registered and triggered by the rising edge of CLK.  
Linear Burst  
Order  
LOW  
Burst order selection input. When LBO is high the Interleaved burst sequence is  
selected. When LBO is low the Linear burst sequence is selected. LBO is a  
static DC input.  
LBO  
Output Enable  
I
LOW  
Asynchronous output enable. OE must be low to read data from the 71V546.  
When OE is high the I/O pins are in a high-impedance state. OE does not need  
to be actively controlled for read and write cycles. In normal operation, OE can  
be tied low.  
OE  
V
DD  
Power Supply  
Ground  
N/A  
N/A  
N/A  
N/A  
3.3V power supply input.  
VSS  
Ground pin.  
3821 tbl 02  
NOTE:  
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.  
2

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