Datasheet > 71V547

71V547

更新时间： 2023-12-20 18:46:34

品牌	Logo	应用领域
瑞萨 - RENESAS		静态存储器
页数	文件大小	规格书
21页	299K
描述
3.3V 128K x 36 ZBT Synchronous Flow-Through SRAM

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数据手册

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71V547 数据手册

128K X 36, 3.3V Synchronous

71V547S

SRAM with ZBT™ Feature, Burst

Counter and Flow-Through Outputs

Features

◆

Single R/W (READ/WRITE) control pin

4-word burst capability (Interleaved or linear)

Individual byte write (BW1 - BW4) control (May tie active)

Three chip enables for simple depth expansion

Single 3.3V power supply (±5%)

◆

128K x 36 memory configuration, flow-through outputs

Supports high performance system speed - 95 MHz

(8ns Clock-to-Data Access)

◆

ZBT^TMFeature - No dead cycles between write and read

cycles

Internally synchronized signal eliminates the need to

control OE

Packaged in a JEDEC standard 100-pin TQFP package

FunctionalBlockDiagram

128K x 36 BIT

MEMORY ARRAY

LBO

Address A [0:16]

Address

CE1, CE2, CE2

R/W

Control

CEN

ADV/LD

BWx

Control Logic

Clk

Mux

Sel

Clock

Gate

Data I/O [0:31], I/O P[1:4]

3822 drw 01

ZBT and Zero Bus Turnaround are trademarks of Renesas and the architecture is supported by Micron Technology and Motorola Inc.

Apr.24.20

12 3 4 5 6 7...21

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