Datasheet > 71V546XS100PFG

71V546XS100PFG

更新时间： 2024-11-20 00:52:19

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器
页数	文件大小	规格书
21页	164K
描述
3.3V Synchronous SRAM

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71V546XS100PFG 数据手册

128K x 36, 3.3V Synchronous IDT71V546S/XS

SRAM with ZBT™ Feature,

Burst Counter and Pipelined Outputs

Features

◆

128K x 36 memory configuration, pipelined outputs

Supports high performance system speed - 133 MHz

(4.2 ns Clock-to-Data Access)

clock cycle, and two cycles later its associated data cycle occurs, be it

read or write.

TheIDT71V546containsdataI/O,addressandcontrolsignalregis-

ters. Outputenableistheonlyasynchronoussignalandcanbeusedto

disabletheoutputsatanygiventime.

A Clock Enable (CEN) pin allows operation of the IDT71V546 to be

suspended as long as necessary. All synchronous inputs are ignored

whenCENishighandtheinternaldeviceregisterswillholdtheirprevious

values.

Therearethreechipenablepins(CE1,CE2,CE2)thatallowtheuser

todeselectthedevicewhendesired. Ifanyoneofthesethreeisnotactive

whenADV/LDislow,nonewmemoryoperationcanbeinitiatedandany

burst that was in progress is stopped. However, any pending data

transfers(readsorwrites)willbecompleted. Thedatabuswilltri-statetwo

cyclesafterthechipisdeselectedorawriteinitiated.

◆

ZBT^TMFeature - No dead cycles between write and read

cycles

Internally synchronized registered outputs eliminate the

need to control OE

◆

Single R/W (READ/WRITE) control pin

Positive clock-edge triggered address, data, and control

signal registers for fully pipelined applications

4-word burst capability (interleaved or linear)

Individual byte write (BW1 - BW4) control (May tie active)

Three chip enables for simple depth expansion

Single 3.3V power supply (±5%)

◆

Packaged in a JEDEC standard 100-pin TQFP package

TheIDT71V546hasanon-chipburstcounter. Intheburstmode,the

IDT71V546canprovidefourcyclesofdataforasingleaddresspresented

totheSRAM. TheorderoftheburstsequenceisdefinedbytheLBOinput

pin. TheLBOpinselectsbetweenlinearandinterleavedburstsequence.

The ADV/LD signal is used to load a new external address (ADV/LD =

LOW) or increment the internal burst counter (ADV/LD = HIGH).

TheIDT71V546SRAMutilizesIDT'shigh-performance,high-volume

3.3V CMOS process, and is packaged in a JEDEC standard 14mm x

20mm100-pinthinplasticquadflatpack(TQFP)forhighboarddensity.

Description

The IDT71V546 is a 3.3V high-speed 4,718,592-bit (4.5 Megabit)

synchronous SRAM organized as 128K x 36 bits. It is designed to

eliminatedeadbuscycleswhenturningthebusaroundbetweenreads

andwrites,orwritesandreads. ThusithasbeengiventhenameZBT^TM,

or Zero Bus Turn-around.

Address and control signals are applied to the SRAM during one

PinDescriptionSummary

- A16

Address Inputs

Input

I/O

Synchronous

Asynchronous

Synchronous

N/A

Three Chip Enables

Output Enable

CE1

, CE

R/W

Read/Write Signal

Clock Enable

CEN

Individual Byte Write Selects

Clock

, BW

CLK

ADV/LD

Advance Burst Address / Load New Address

Linear / Interleaved Burst Order

Data Input/Output

Synchronous

Static

LBO

I/O0

- I/O31, I/OP1 - I/OP4

Synchronous

Static

3.3V Power

Supply

Ground

Static

3821 tbl 01

OCTOBER 2008

ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola Inc.

DSC-3821/05

12 3 4 5 6 7...21

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与71V546XS100PFG相关器件

型号	品牌	获取价格	描述	数据表
71V546XS100PFGI	IDT	获取价格	3.3V Synchronous SRAM
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71V546XS117PFGI	IDT	获取价格	3.3V Synchronous SRAM
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71V546XS133PFGI	IDT	获取价格	3.3V Synchronous SRAM
71V547	RENESAS	获取价格	3.3V 128K x 36 ZBT Synchronous Flow-Through SRAM
71V547S100PFG	IDT	获取价格	Synchronous SRAM
71V547S100PFG8	IDT	获取价格	Synchronous SRAM
71V547S100PFGI	IDT	获取价格	Synchronous SRAM
71V547S100PFGI8	IDT	获取价格	Synchronous SRAM

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