5秒后页面跳转
71V546S133PFGI8 PDF预览

71V546S133PFGI8

更新时间: 2024-01-14 03:36:40
品牌 Logo 应用领域
艾迪悌 - IDT 时钟静态存储器内存集成电路
页数 文件大小 规格书
21页 228K
描述
Synchronous SRAM with ZBT Feature Burst Counter and Pipelined Outputs

71V546S133PFGI8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TQFP
包装说明:QFP, QFP100,.63X.87针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.2
最长访问时间:4.2 ns最大时钟频率 (fCLK):133 MHz
I/O 类型:COMMONJESD-30 代码:R-PQFP-G100
JESD-609代码:e3内存密度:4718592 bit
内存集成电路类型:ZBT SRAM内存宽度:36
湿度敏感等级:3功能数量:1
端子数量:100字数:131072 words
字数代码:128000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX36输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:QFP
封装等效代码:QFP100,.63X.87封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:3.3 V
认证状态:Not Qualified最大待机电流:0.045 A
最小待机电流:3.14 V子类别:SRAMs
最大压摆率:0.31 mA最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.635 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
Base Number Matches:1

71V546S133PFGI8 数据手册

 浏览型号71V546S133PFGI8的Datasheet PDF文件第2页浏览型号71V546S133PFGI8的Datasheet PDF文件第3页浏览型号71V546S133PFGI8的Datasheet PDF文件第4页浏览型号71V546S133PFGI8的Datasheet PDF文件第5页浏览型号71V546S133PFGI8的Datasheet PDF文件第6页浏览型号71V546S133PFGI8的Datasheet PDF文件第7页 
                                        
                                        
                             
                             
                                                                                                                                                                       
                                                                                                                                                                       
                             
                             
                                                                                                                                                                       
                                                                                                                                                                       
                             
                             
                                                                                                                                                                       
                                                                                                                                                                       
                                                                                                                                                                       
                                                                                                                                                                       
                             
                             
                                                                                                                                                                       
                                                                                                                                                                       
                                                                                                                                                                       
                                                                                                                                                                       
                             
                             
                                                                                                                                                                       
                                                                                                                                                                       
128K x 36, 3.3V Synchronous  
SRAM with ZBTFeature  
Burst Counter and Pipelined Outputs  
IDT71V546S  
Features  
128K x 36 memory configuration, pipelined outputs  
Supports high performance system speed - 133 MHz  
(4.2 ns Clock-to-Data Access)  
Positive clock-edge triggered address, data, and control  
signal registers for fully pipelined applications  
4-word burst capability (interleaved or linear)  
Individual byte write (BW1 - BW4) control (May tie active)  
Three chip enables for simple depth expansion  
Single 3.3V power supply ( 5%)  
ZBTTM Feature - No dead cycles between write and read  
cycles  
Internally synchronized registered outputs eliminate the  
need to control OE  
Single R/W (READ/WRITE) control pin  
Packaged in a JEDEC standard 100-pin TQFP package  
Green parts available, see Ordering Information  
Functional Block Diagram  
128K x 36 BIT  
MEMORY ARRAY  
LBO  
Address A [0:16]  
D
Q
Q
Address  
CE1, CE2, CE2  
R/W  
D
Control  
CEN  
ADV/LD  
DI  
DO  
BWx  
D
Q
Control Logic  
Clk  
Mux  
Sel  
D
Output Register  
Q
Clock  
Gate  
OE  
3821 drw 01  
.
Data I/O [0:31], I/O P[1:4]  
AUGUST 2017  
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola Inc.  
1
DSC-3821/07  
©2017 Integrated Device Technology, Inc.  

与71V546S133PFGI8相关器件

型号 品牌 描述 获取价格 数据表
71V546XS100PFG IDT 3.3V Synchronous SRAM

获取价格

71V546XS100PFGI IDT 3.3V Synchronous SRAM

获取价格

71V546XS117PFG IDT 3.3V Synchronous SRAM

获取价格

71V546XS117PFGI IDT 3.3V Synchronous SRAM

获取价格

71V546XS133PFG IDT 3.3V Synchronous SRAM

获取价格

71V546XS133PFGI IDT 3.3V Synchronous SRAM

获取价格