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70V261S25PFGI PDF预览

70V261S25PFGI

更新时间: 2024-12-02 00:45:11
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
17页 338K
描述
HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

70V261S25PFGI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QFP
包装说明:LFQFP, QFP100,.63SQ,20针数:100
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.21
最长访问时间:25 nsI/O 类型:COMMON
JESD-30 代码:S-PQFP-G100JESD-609代码:e3
长度:14 mm内存密度:262144 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:16
湿度敏感等级:3功能数量:1
端口数量:2端子数量:100
字数:16384 words字数代码:16000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LFQFP封装等效代码:QFP100,.63SQ,20
封装形状:SQUARE封装形式:FLATPACK, LOW PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.6 mm最大待机电流:0.006 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.2 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:14 mmBase Number Matches:1

70V261S25PFGI 数据手册

 浏览型号70V261S25PFGI的Datasheet PDF文件第2页浏览型号70V261S25PFGI的Datasheet PDF文件第3页浏览型号70V261S25PFGI的Datasheet PDF文件第4页浏览型号70V261S25PFGI的Datasheet PDF文件第5页浏览型号70V261S25PFGI的Datasheet PDF文件第6页浏览型号70V261S25PFGI的Datasheet PDF文件第7页 
HIGH-SPEED 3.3V  
16K x 16 DUAL-PORT  
STATIC RAM  
IDT70V261S/L  
Š
Features  
IDT70V261 easily expands data bus width to 32 bits or more  
using the Master/Slave select when cascading more than  
one device  
M/S = VIH for BUSY output flag on Master  
M/S = VIL for BUSY input on Slave  
Interrupt Flag  
On-chip port arbitration logic  
Full on-chip hardware support of semaphore signaling  
between ports  
Fully asynchronous operation from either port  
TTL-compatible, single 3.3V (±0.3V) power supply  
Available in a 100-pin TQFP, Thin Quad Plastic Flatpack  
Industrial temperature range (-40°C to +85°C) is available  
for selected speed  
True Dual-Ported memory cells which allow simultaneous  
access of the same memory location  
High-speed access  
– Commercial:25/35/55ns(max.)  
– Industrial: 25ns (max.)  
Low-power operation  
– IDT70V261S  
Active: 300mW (typ.)  
Standby: 3.3mW (typ.)  
– IDT70V261L  
Active: 300mW (typ.)  
Standby: 660µW (typ.)  
Separate upper-byte and lower-byte control for multiplexed  
bus compatibility  
Green parts available, see ordering information  
Functional Block Diagram  
R/W  
UB  
L
R/W  
R
R
UB  
L
LB  
CE  
OE  
L
LB  
CE  
OE  
R
L
L
R
R
I/O8L-I/O15L  
I/O0L-I/O7L  
I/O8R-I/O15R  
I/O  
Control  
I/O  
Control  
I/O0R-I/O7R  
(1,2)  
(1,2)  
L
BUSY  
R
BUSY  
A
13R  
0R  
A
13L  
Address  
Decoder  
MEMORY  
ARRAY  
Address  
Decoder  
A
0L  
A
14  
14  
ARBITRATION  
INTERRUPT  
SEMAPHORE  
LOGIC  
CE  
OE  
R/W  
R
CE  
OE  
R/W  
L
L
R
L
R
SEM  
INTR  
R
SEM  
L
(2)  
(2)  
M/S  
INTL  
3040 drw 01  
NOTES:  
1. (MASTER): BUSY is output; (SLAVE): BUSY is input.  
2. BUSY and INT outputs are non-tri-stated push-pull.  
SEPTEMBER 2012  
1
DSC-3040/11  
©2012IntegratedDeviceTechnology,Inc.  

70V261S25PFGI 替代型号

型号 品牌 替代类型 描述 数据表
70V261S25PFG IDT

功能相似

Dual-Port SRAM, 16KX16, 25ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, T
IDT70V261S25PFG IDT

功能相似

Dual-Port SRAM, 16KX16, 25ns, CMOS, PQFP100, PLASTIC, TQFP-100

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