5秒后页面跳转
70V26L25JG8 PDF预览

70V26L25JG8

更新时间: 2024-02-19 12:34:43
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
17页 175K
描述
HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

70V26L25JG8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:PLCC
包装说明:QCCJ,针数:84
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.4
最长访问时间:25 ns其他特性:SEMAPHORE; AUTOMATIC POWER-DOWN
JESD-30 代码:S-PQCC-J84JESD-609代码:e3
长度:29.3116 mm内存密度:262144 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:16
功能数量:1端子数量:84
字数:16384 words字数代码:16000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16KX16
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装形状:SQUARE封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:4.57 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:MATTE TIN端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30宽度:29.3116 mm
Base Number Matches:1

70V26L25JG8 数据手册

 浏览型号70V26L25JG8的Datasheet PDF文件第2页浏览型号70V26L25JG8的Datasheet PDF文件第3页浏览型号70V26L25JG8的Datasheet PDF文件第4页浏览型号70V26L25JG8的Datasheet PDF文件第5页浏览型号70V26L25JG8的Datasheet PDF文件第6页浏览型号70V26L25JG8的Datasheet PDF文件第7页 
IDT70V26S/L  
HIGH-SPEED 3.3V  
16K x 16 DUAL-PORT  
STATIC RAM  
LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018  
Features  
IDT70V26 easily expands data bus width to 32 bits or more  
using the Master/Slave select when cascading more than  
one device  
M/S = VIH for BUSY output flag on Master  
M/S = VIL for BUSY input on Slave  
On-chip port arbitration logic  
Full on-chip hardware support of semaphore signaling  
between ports  
Fully asynchronous operation from either port  
TTL-compatible, single 3.3V ( 0.3V) power supply  
Available in 84-pin PGA and PLCC  
True Dual-Ported memory cells which allow simultaneous  
reads of the same memory location  
High-speed access  
– Commercial:25/35/55ns(max.)  
– Industrial: 25ns (max.)  
Low-power operation  
– IDT70V26S  
Active: 300mW (typ.)  
Standby: 3.3mW (typ.)  
– IDT70V26L  
Active: 300mW (typ.)  
Industrial temperature range (-40°C to +85°C) is available  
for selected speeds  
Green parts available, see ordering information  
Standby: 660µW (typ.)  
Separate upper-byte and lower-byte control for multiplexed  
bus compatibility  
Functional Block Diagram  
R/W  
L
R/W  
R
R
UB  
UBL  
LBL  
LBR  
CE  
L
L
CE  
R
OE  
OER  
I/O8L-I/O15L  
I/O0L-I/O7L  
I/O8R-I/O15R  
I/O  
Control  
I/O  
Control  
I/O0R-I/O7R  
(1,2)  
(1,2)  
L
BUSY  
BUSY  
R
A
13L  
A
13R  
Address  
Decoder  
MEMORY  
ARRAY  
Address  
Decoder  
A
0L  
A
0R  
14  
14  
ARBITRATION  
SEMAPHORE  
LOGIC  
CEL  
CER  
SEMR  
SEM  
L
M/S  
2945 drw 01  
NOTES:  
1. (MASTER): BUSY is output; (SLAVE): BUSY is input.  
2. BUSY outputs are non-tri-stated push-pull.  
JUNE 2018  
1
DSC 2945/18  
©2018 Integrated Device Technology, Inc.  

与70V26L25JG8相关器件

型号 品牌 获取价格 描述 数据表
70V26L25JGI IDT

获取价格

Dual-Port SRAM, 16KX16, 35ns, CMOS, PQCC84, 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC
70V26L25JGI8 IDT

获取价格

Dual-Port SRAM, 16KX16, 25ns, CMOS, PQCC84, PLASTIC, LCC-84
70V26L25JI IDT

获取价格

PLCC-84, Tube
70V26L25JI8 IDT

获取价格

PLCC-84, Reel
70V26L35GG IDT

获取价格

Dual-Port SRAM, 16KX16, 35ns, CMOS, CBGA84, 1.120 X 1.120 INCH, 0.160 INCH HEIGHT, CERAMIC
70V26L35GG8 IDT

获取价格

SRAM
70V26L35GGI IDT

获取价格

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM
70V26L35GGI8 IDT

获取价格

HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM
70V26L35J IDT

获取价格

PLCC-84, Tube
70V26L35JG IDT

获取价格

Dual-Port SRAM, 16KX16, 35ns, CMOS, PQCC84, 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC