Datasheet > 4N60ZG-TF3-T

4N60ZG-TF3-T

更新时间： 2024-09-26 01:14:19

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
8页	359K
描述
4A, 600V N-CHANNEL POWER MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

4N60ZG-TF3-T 数据手册

UNISONIC TECHNOLOGIES CO., LTD

4N60Z

Power MOSFET

4A, 600V N-CHANNEL

POWER MOSFET

DESCRIPTION

The UTC 4N60Z is a high voltage power MOSFET and is

designed to have better characteristics, such as fast switching

time, low gate charge, low on-state resistance and have a high

rugged avalanche characteristics. This power MOSFET is usually

used at high speed switching applications in power supplies, PWM

motor controls, high efficient DC to DC converters and bridge

circuits.

TO-220F

FEATURES

* R_DS(ON)= 2.5Ω @V_GS= 10 V

* Ultra Low Gate Charge ( typical 15 nC )

* Low Reverse Transfer Capacitance ( C_RSS= typical 8.0 pF )

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, high Ruggedness

SYMBOL

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

TO-220F

Packing

Lead Free

Halogen Free

4N60ZG-TF3-T

4N60ZL-TF3-T

Tube

Note: Pin Assignment: G: Gate D: Drain S: Source

www.unisonic.com.tw

1 of 8

QW-R502-777.b

12 3 4 5 6 7 8

中文翻译

下载PDF

与4N60ZG-TF3-T相关器件

型号	品牌	获取价格	描述	数据表
4N60ZL-TF1-T	UTC	获取价格	N-CHANNEL POWER MOSFET
4N60ZL-TF3-T	UTC	获取价格	4A, 600V N-CHANNEL POWER MOSFET
4N60ZL-TMS-T	UTC	获取价格	Power Field-Effect Transistor,
4N65	UTC	获取价格	4 Amps, 650 Volts N-CHANNEL POWER MOSFET
4N65	LGE	获取价格	场效应晶体管
4N65	UMW	获取价格	漏源电压（Vdss）:650V;持续漏极电流（Id）（在25°C时）:4A(Tc);栅极-
4N65	HOTTECH	获取价格	TO-252
4N65-C	UTC	获取价格	N-CH
4N65-E	UTC	获取价格	N-CH
4N65F	LGE	获取价格	场效应晶体管