Datasheet > 3N165-TO-99-6L-ROHS

3N165-TO-99-6L-ROHS

更新时间： 2024-02-24 00:48:01

品牌	Logo	应用领域
凌特 - Linear		/
页数	文件大小	规格书
2页	293K
描述
Transistor,

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3N165-TO-99-6L-ROHS 数据手册

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MATCHING CHARACTERISTICS 3N165

LIMITS

SYMBOL

G_fs1/G_fs2

V_GS1-2

CHARACTERISTIC

MIN. MAX. UNITS

CONDITIONS

Forward Transconductance Ratio

Gate Source Threshold Voltage Differential

0.90

1.0

V_DS=-15V I_D=-500 µA f=1kHz V_SB=0V

V_DS=-15V I_D=-500 µA V_SB=0V

100

ΔV_GS1-2/ΔT Gate Source Threshold Voltage Differential

100 µV/ºC V_DS=-15V I_D=-500 µA V_SB=0V

T_A=-55ºC to = +125ºC

Change with Temperature

TYPICAL SWITCHING WAVEFORM

INPUT PULSE

Rise Time≤2ns

Pulse Width≥200ns

SAMPLING SCOPE

T_r≤0.2ns

C_IN≤2pF

R_IN≥10M

Typical Switching Time Test Circuit

Circuit

NOTES:

1. MOS field effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To

avoid possible damage to the device while wiring, testing, or in actual operation, follow these procedures:

To avoid the build-up of static charge, the leads of the devices should remain shorted together with a metal ring except when being tested

or used. Avoid unnecessary handling. Pick up devices by the case instead of the leads. Do not insert or remove devices from circuits

with the power on, as transient voltages may cause permanent damage to the devices.

2. Per transistor.

3. For design reference only, not 100% tested.

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional

operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing

high-quality discrete components. Expertise brought to LIS is based on processes and products developed

at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,

a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,

co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.

Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Doc 201138 06/26/2013 Rev#A6 ECN# 3N165 3N166

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