Datasheet > 3LN01C_12

3LN01C_12

更新时间： 2024-09-17 12:22:35

品牌	Logo	应用领域
三洋 - SANYO		开关通用开关
页数	文件大小	规格书
7页	437K
描述
General-Purpose Switching Device Applications

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数据手册

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3LN01C_12 数据手册

3LN01C

Ordering number : EN6260B

SANYO Sem iconductors

DATA S HEET

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

3LN01C

Features

•

Low ON-resistance

•

Ultrahigh-speed switching

•

2.5V drive

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

±10

0.15

0.6

DSS

GSS

Drain Current (Pulse)

PW 10 s, duty cycle 1%

≤

Allowable Power Dissipation

Channel Temperature

Storage Temperature

0.25

150

°C

Tch

Tstg

--55 to +150

This product is designed to “ESD immunity < 200V ”, so please take care when handling.

Machine Model

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: CP

7013A-013

• JEITA, JEDEC

: SC-59, TO-236, SOT-23, TO-236AB

•

Minimum Packing Quantity : 3,000 pcs./reel

2.9

0.1

3LN01C-TB-E

3LN01C-TB-H

Packing Type: TB

Marking

0.95

0.4

1 : Gate

2 : Source

3 : Drain

Electrical Connection

SANYO : CP

http://semicon.sanyo.com/en/network

62712 TKIM/33006PE MSIM TB-00002198/21400 TS(KOTO) TA-1987

No.6260-1/7

12 3 4 5 6 7

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3LN01C-T-BE	ONSEMI	获取价格	TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal
3LN01C-TB-E	SANYO	获取价格	General-Purpose Switching Device Applications
3LN01C-TB-E	ONSEMI	获取价格	小信号 MOSFET，30V，150mA，3.7 Ω，单 N 沟道，CP
3LN01C-TB-H	SANYO	获取价格	General-Purpose Switching Device Applications
3LN01C-TB-H	ONSEMI	获取价格	小信号 MOSFET，30V，150mA，3.7 Ω，单 N 沟道，CP
3LN01M	UTC	获取价格	N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
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3LN01M	ONSEMI	获取价格	Small Signal MOSFET
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3LN01M-AL3-R	UTC	获取价格	N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS