Datasheet > 3LN01M_06

3LN01M_06

更新时间： 2022-09-18 23:08:55

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三洋 - SANYO		开关通用开关
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4页	48K
描述
General-Purpose Switching Device Applications

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3LN01M_06 数据手册

Ordering number : EN6138A

3LN01M

SANYO Sem iconductors

DATA S HEET

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

3LN01M

Features

•

Low ON-resistance.

•

Ultrahigh-speed switching.

•

2.5V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

±10

0.15

0.6

DSS

GSS

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

PW≤10µs, duty cycle≤1%

0.15

150

°C

Tch

Tstg

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

=1mA, V =0V

Unit

min

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

µA

(BR)DSS

=30V, V =0V

DSS

GSS

=±8V, V =0V

±10

V (off)

=10V, I =100µA

0.4

1.3

Forward Transfer Admittance

yfs

=10V, I =80mA

0.15

0.22

2.9

3.7

6.4

7.0

5.9

2.3

(on)1

(on)2

(on)3

=80mA, V =4V

3.7

5.2

Ω

Static Drain-to-Source On-State Resistance

=40mA, V =2.5V

Ω

=10mA, V =1.5V

12.8

Ω

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Marking : YA

Ciss

=10V, f=1MHz

Coss

Crss

Continued on next page.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

No.6138-1/4

72606 / 32406PE MS IM TB-00002152 / 31000 TS (KOTO) TA-1985

12 3 4

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