Datasheet > 3LN01M-TL-H

3LN01M-TL-H

更新时间： 2024-01-15 17:51:20

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5页	301K
描述
Small Signal MOSFET

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3LN01M-TL-H 数据手册

3LN01M

Small Signal MOSFET

www.onsemi.com

30V, 3.7Ω, 0.15A, Single N-Channel

Features

Electrical Connection

N-Channel

• Low ON-Resistance

• Ultrahigh-Speed Switching

• 1.5V Drive

• Halogen Free Compliance

Specifications

Absolute Maximum Ratings at Ta = 25°C

1:Gate

2:Source

3:Drain

Parameter

Symbol

Value

Unit

Drain to Source Voltage

DSS

Gate to Source Voltage

Drain Current (DC)

GSS

0.15

Drain Current (Pulse)

0.6

PW≤10μs, duty cycle≤1%

Packing Type:TL

Marking

Power Disspation

0.15

150

°C

Junction Temperature

Storage Temperature

Tstg

−55 to +150

LOT No.

This product is designed to “ESD immunity < 200V*”, so please take care when handling.

* Machine Model

LOT No.

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

Electrical Characteristics at Ta = 25°C

Value

Parameter

Symbol

Conditions

Unit

min

typ

max

Drain to Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate to Source Leakage Current

Gate Threshold Voltage

)

=1mA, V =0V

μA

BR DSS

=30V, V =0V

DSS

=±8V, V =0V

GSS

(th)

=10V, I =100μA

0.4

1.3

Forward Transconductance

=10V, I =80mA

0.15

0.22

Continued on next page.

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of this data sheet.

November 2014 - Rev. 1

Publication Order Number :

3LN01M/D

12 3 4 5

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