Ordering number : EN6645B
3LP01C
SANYO Sem iconductors
DATA S HEET
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
3LP01C
Features
•
Low ON-resistance.
•
High-speed switching.
•
2.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
V
--30
±10
--0.1
--0.4
0.25
150
DSS
Gate-to-Source Voltage
Drain Current (DC)
V
GSS
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10μs, duty cycle≤1%
A
DP
P
W
°C
°C
D
Tch
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--30
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
V
I
=--1mA, V =0V
D GS
V
μA
μA
V
(BR)DSS
I
I
V
V
V
V
=--30V, V =0V
GS
--1
DSS
DS
GS
DS
DS
=±8V, V =0V
DS
±10
GSS
V
(off)
GS
=--10V, I =--100μA
--0.4
80
--1.4
D
Forward Transfer Admittance
yfs
=--10V, I =--50mA
110
mS
Ω
⏐
⏐
D
R
R
R
(on)1
DS
(on)2
DS
(on)3
DS
I
I
I
=--50mA, V =--4V
GS
8
11
27
10.4
15.4
54
D
D
D
Static Drain-to-Source On-State Resistance
=--30mA, V =--2.5V
GS
Ω
=--1mA, V =--1.5V
GS
Ω
Marking : XA
Continued on next page.
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
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32509 MS IM TC-00001903 / 72606 / 33006PE MS IM TB-00002203 / 90100 TS IM TA-1982 No.6645-1/4
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