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3LP01S-TL-E PDF预览

3LP01S-TL-E

更新时间: 2024-02-15 02:51:39
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管光电二极管通用开关PC
页数 文件大小 规格书
7页 526K
描述
General-Purpose Switching Device Applications

3LP01S-TL-E 技术参数

是否无铅:不含铅生命周期:Lifetime Buy
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.32
Samacsys Confidence:3Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/410792.2.1.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=410792
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=4107923D View:https://componentsearchengine.com/viewer/3D.php?partID=410792
Samacsys PartID:410792Samacsys Image:https://componentsearchengine.com/Images/9/3LP01S-TL-E.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/2/3LP01S-TL-E.jpgSamacsys Pin Count:3
Samacsys Part Category:MOSFET (P-Channel)Samacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:3LP01S-TL-ESamacsys Released Date:2019-01-08 05:32:18
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):0.1 A
最大漏极电流 (ID):0.1 A最大漏源导通电阻:10.4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
JESD-609代码:e6湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.15 W子类别:Other Transistors
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

3LP01S-TL-E 数据手册

 浏览型号3LP01S-TL-E的Datasheet PDF文件第2页浏览型号3LP01S-TL-E的Datasheet PDF文件第3页浏览型号3LP01S-TL-E的Datasheet PDF文件第4页浏览型号3LP01S-TL-E的Datasheet PDF文件第5页浏览型号3LP01S-TL-E的Datasheet PDF文件第6页浏览型号3LP01S-TL-E的Datasheet PDF文件第7页 
Ordering number : EN6681B  
SANYO Sem iconductors  
DATA S HEET  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
3LP01S  
Features  
Low ON-resistance  
Ultrahigh-speed switching  
2.5V drive  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--30  
±10  
--0.1  
--0.4  
0.15  
150  
DSS  
V
V
GSS  
I
A
D
Drain Current (Pulse)  
I
PW 10 s, duty cycle 1%  
A
μ
DP  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
P
W
°C  
°C  
D
Tch  
Tstg  
--55 to +150  
This product is designed to “ESD immunity < 200V ”, so please take care when handling.  
*
Machine Model  
*
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: SMCP  
7013A-013  
• JEITA, JEDEC  
: SC-75, SOT-416  
Minimum Packing Quantity : 3,000 pcs./reel  
3LP01S-TL-E  
1.6  
0.8  
Packing Type: TL  
Marking  
0.4  
0.4  
1
2
3
XA  
TL  
1 : Gate  
2 : Source  
3 : Drain  
Electrical Connection  
0.1 MIN  
3
SANYO : SMCP  
1
2
http://semicon.sanyo.com/en/network  
62712 TKIM/41006PE MSIM TB-00002191/12201 TSIM TA-2005  
No.6681-1/7  

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